The subject matter contained herein discloses methods for forming a vertical metallic pillar overlying an under bump metal pad further overlying a semiconductor substrate, and applying a discrete solder cap on a top surface of the pillar, wherein the metallic pillar is defined by at least one photoresist layer. The method includes heating a multi-element metallic paste containing a variable amount of metallic powder, a melting point depressant and a flux such that the metal powder sinters to form the metallic pillar and simultaneously adheres the metallic pillar to the underbump metal pad.

A backlight unit and a display device including the same are disclosed. More specifically, a backlight unit is disclosed that includes a plurality of light sources disposed on a glass substrate and disposed in a plurality of rows and a plurality of columns, and first and second transistors disposed on the glass substrate and spaced apart from each other, wherein each of the first transistor and the second transistor is disposed so as not to overlap the plurality of light sources disposed at points where two rows and two columns cross each other. Thus, image quality is excellent.

A semiconductor device includes a carrier, an under bump metallurgy (UBM) pad on the carrier, and a post on a surface of the UBM pad. In some embodiments, a height of the post to a longest length of the UBM pad is between about 0.25 and about 0.7. A method of manufacturing a semiconductor device includes providing a carrier, disposing a UBM pad on the carrier and forming a post on the UBM pad.

A semiconductor device includes a carrier, an under bump metallurgy (UBM) pad on the carrier, and a post on a surface of the UBM pad. In some embodiments, a height of the post to a longest length of the UBM pad is between about 0.25 and about 0.7. A method of manufacturing a semiconductor device includes providing a carrier, disposing a UBM pad on the carrier and forming a post on the UBM pad.

A semiconductor device has a substrate. A conductive layer is formed over the substrate. A duplex plated bump on lead pad is formed over the substrate. An insulating layer is formed over the conductive layer and the substrate. A portion of the insulating over the duplex plated bump on lead pad is removed using a laser direct ablation process. The insulating layer is a lamination layer. The duplex plated bump on lead pad has a wide bump on lead pad. A semiconductor die is mounted over the substrate. The semiconductor die has a composite conductive interconnect structure. The semiconductor die has a first bump and a second bump with a pitch ranging from 90-150 micrometers between the first bump and the second bump. A duplex plated contact pad is formed on a surface of the substrate opposite the duplex plated bump-on-lead pad.

A semiconductor device has a substrate. A conductive layer is formed over the substrate. A duplex plated bump on lead pad is formed over the substrate. An insulating layer is formed over the conductive layer and the substrate. A portion of the insulating over the duplex plated bump on lead pad is removed using a laser direct ablation process. The insulating layer is a lamination layer. The duplex plated bump on lead pad has a wide bump on lead pad. A semiconductor die is mounted over the substrate. The semiconductor die has a composite conductive interconnect structure. The semiconductor die has a first bump and a second bump with a pitch ranging from 90-150 micrometers between the first bump and the second bump. A duplex plated contact pad is formed on a surface of the substrate opposite the duplex plated bump-on-lead pad.

A conductive pillar bump includes a first conductive portion and a second conductive portion. The second conductive portion is located on the first conductive portion. A sidewall of the second conductive portion has at least one trench. The trench extends from a top portion of the second conductive portion to a bottom portion of the second conductive portion. The trench exposes a portion of a top surface of the first conductive portion.

A conductive pillar bump includes a first conductive portion and a second conductive portion. The second conductive portion is located on the first conductive portion. A sidewall of the second conductive portion has at least one trench. The trench extends from a top portion of the second conductive portion to a bottom portion of the second conductive portion. The trench exposes a portion of a top surface of the first conductive portion.

An electronic device includes a substrate; a first bonding pad and a second bonding pad disposed on the substrate; an electronic assembly on the substrate; a first conductive structure; and a second conductive structure. The electronic assembly includes a third bonding pad and a fourth bonding pad. The third bonding pad is electrically connected to the first bonding pad by the first conductive structure and the fourth bonding pad is electrically connected to the second bonding pad by the second conductive structure. The thickness of the first conductive structure and the thickness of the second conductive structure are greater than or equal to 10 μm and less than or equal to 30 μm.

A light emitting apparatus includes: a mount substrate; a first light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the first light emitting device via an adhesive material, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the first light emitting device, and wherein a first lateral surface of the light transparent member is located laterally inward of a lateral surface of the first light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.