Integrated circuit cell architectures including both front-side and back-side structures. One or more of back-side implant, semiconductor deposition, dielectric deposition, metallization, film patterning, and wafer-level layer transfer is integrated with front-side processing. Such double-side processing may entail revealing a back side of structures fabricated from the front-side of a substrate. Host-donor substrate assemblies may be built-up to support and protect front-side structures during back-side processing. Front-side devices, such as FETs, may be modified and/or interconnected during back-side processing. Electrical test may be performed from front and back sides of a workpiece. Back-side devices, such as FETs, may be integrated with front-side devices to expand device functionality, improve performance, or increase device density.

A structure has a first substrate bonded to a first under-bump metallization (UBM) structure, the first UBM structure comprising a first bonding region laterally surrounded by a first superconducting region. A second substrate is bonded to a second under-bump metallization (UBM) structure, the second UBM structure comprising a second bonding region laterally surrounded by a second superconducting region; and a superconducting solder material joins the first UBM structure to the second UBM structure.

A structure has a first substrate bonded to a first under-bump metallization (UBM) structure, the first UBM structure comprising a first bonding region laterally surrounded by a first superconducting region. A second substrate is bonded to a second under-bump metallization (UBM) structure, the second UBM structure comprising a second bonding region laterally surrounded by a second superconducting region; and a superconducting solder material joins the first UBM structure to the second UBM structure.

A technique relates to a structure. An under-bump-metallization (UBM) structure includes a first region and a second region. The first and second regions are laterally positioned in the UBM structure. The first region includes a superconducting material. A substrate opposes the UBM structure. A superconducting solder material joins the first region to the substrate and the second region to the substrate.

A technique relates to a structure. An under-bump-metallization (UBM) structure includes a first region and a second region. The first and second regions are laterally positioned in the UBM structure. The first region includes a superconducting material. A substrate opposes the UBM structure. A superconducting solder material joins the first region to the substrate and the second region to the substrate.

Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process:

0?|?.sub.T1.sup.T2A(T)dT??.sub.T1.sup.T3E(T)dT|<0.01

wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process:

0?|?.sub.T1.sup.T2A(T)dT??.sub.T1.sup.T3E(T)dT|<0.01

wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

First and second contacts are formed on first and second wafers from disparate first and second conductive materials, at least one of which is subject to surface oxidation when exposed to air. A layer of oxide-inhibiting material is disposed over a bonding surface of the first contact and the first and second wafers are positioned relative to one another such that a bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material. Thereafter, the first and second contacts and the layer of oxide-inhibiting material are heated to a temperature that renders the first and second contacts and the layer of oxide-inhibiting material to liquid phases such that at least the first and second contacts alloy into a eutectic bond.

Semiconductor devices and electronics packaging methods include integrated circuit chips having redundant signal bond pads along with signal bond pads connected to the same signal port for non-destructive testing of the integrated circuit chips prior to packaging. Electrical testing is made via the redundant signal bond after which qualified integrated circuit chips can be attached to a pristine and bumped final interposer or printed circuit board to provide increased reliability to the assembled electronic package.

Semiconductor devices and electronics packaging methods include integrated circuit chips having redundant signal bond pads along with signal bond pads connected to the same signal port for non-destructive testing of the integrated circuit chips prior to packaging. Electrical testing is made via the redundant signal bond after which qualified integrated circuit chips can be attached to a pristine and bumped final interposer or printed circuit board to provide increased reliability to the assembled electronic package.