An interfacial structure, along with methods of forming such, are described. The structure includes a first interfacial layer having a first dielectric layer, a first conductive feature disposed in the first dielectric layer, and a first thermal conductive layer disposed on the first dielectric layer. The structure further includes a second interfacial layer disposed on the first interfacial layer. The second interfacial layer is a mirror image of the first interfacial layer with respect to an interface between the first interfacial layer and the second interfacial layer. The second interfacial layer includes a second thermal conductive layer disposed on the first thermal conductive layer, a second dielectric layer disposed on the second thermal conductive layer, and a second conductive feature disposed in the second dielectric layer.

A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm. A method for manufacturing a semiconductor device according to the present invention includes: a step of forming a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, on the surface of a first conductive-type SiC semiconductor layer; and a step for heat treating the Schottky metal while the surface thereof is exposed, and structuring the junction of the SiC semiconductor layer to the Schottky metal to be planar, or to have recesses and protrusions of equal to or less than 5 nm.

An electronic device includes a substrate; a first bonding pad and a second bonding pad disposed on the substrate; an electronic assembly on the substrate; a first conductive structure; and a second conductive structure. The electronic assembly includes a third bonding pad and a fourth bonding pad. The third bonding pad is electrically connected to the first bonding pad by the first conductive structure and the fourth bonding pad is electrically connected to the second bonding pad by the second conductive structure. The thickness of the first conductive structure and the thickness of the second conductive structure are greater than or equal to 10 μm and less than or equal to 30 μm.

A light emitting apparatus includes: a mount substrate; a first light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the first light emitting device via an adhesive material, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the first light emitting device, and wherein a first lateral surface of the light transparent member is located laterally inward of a lateral surface of the first light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.

A light emitting apparatus includes: a mount substrate; a first light emitting device mounted on the mount substrate; a light transparent member, wherein a lower surface of the light transparent member is attached to an upper surface of the first light emitting device via an adhesive material, wherein the light transparent member has a plate shape and is positioned to receive incident light emitted from the first light emitting device, and wherein a first lateral surface of the light transparent member is located laterally inward of a lateral surface of the first light emitting device; and a covering member that contains a light reflective material and covers at least the lateral surface of the light transparent member.

A display device including pads; an anisotropic conductive film on the pads; and a connection member bonded to the pads through the film, the connection member including bumps, the film includes a supporting layer including a plurality of conductive particles having a part protruded from a first and second surface of the support layer; a first adhesive layer contacting the first surface and the part of each conductive particle protruding from the first surface; and a second adhesive layer contacting the second surface and the part of each conductive particle protruding from the second surface, and wherein the first or second adhesive layer is positioned at both of a first and second region of the display device, the first region being a region in which the pads and the bumps are overlapped and the second region being a region in which the pads and the bumps are not overlapped.

A display device including pads; an anisotropic conductive film on the pads; and a connection member bonded to the pads through the film, the connection member including bumps, the film includes a supporting layer including a plurality of conductive particles having a part protruded from a first and second surface of the support layer; a first adhesive layer contacting the first surface and the part of each conductive particle protruding from the first surface; and a second adhesive layer contacting the second surface and the part of each conductive particle protruding from the second surface, and wherein the first or second adhesive layer is positioned at both of a first and second region of the display device, the first region being a region in which the pads and the bumps are overlapped and the second region being a region in which the pads and the bumps are not overlapped.

Various embodiments provide a method of forming a bondpad, wherein the method comprises providing a raw bondpad, and forming a recess structure at a contact surface of the raw bondpad, wherein the recess structure comprises sidewalls being inclined with respect to the contact surface.

Various embodiments provide a method of forming a bondpad, wherein the method comprises providing a raw bondpad, and forming a recess structure at a contact surface of the raw bondpad, wherein the recess structure comprises sidewalls being inclined with respect to the contact surface.

A method of manufacturing a semiconductor package including coating a flux on a connection pad provided on a first surface of a substrate, the flux including carbon nanotubes (CNTs), placing a solder ball on the connection pad coated with the flux, forming a solder layer attached to the connection pad from the solder ball through a reflow process, and mounting a semiconductor chip on the substrate such that the solder layer faces a connection pad in the semiconductor chip may be provided.