A bonding element includes a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

A semiconductor device having an EMI shield layer and/or EMI shielding wires, and a manufacturing method thereof, are provided. In an example embodiment, the semiconductor device includes a semiconductor die, an EMI shield layer shielding the semiconductor die, and an encapsulating portion encapsulating the EMI shield layer. In another example embodiment, the semiconductor device further includes EMI shielding wires extending from the EMI shield layer and shielding the semiconductor die.

A semiconductor device having an EMI shield layer and/or EMI shielding wires, and a manufacturing method thereof, are provided. In an example embodiment, the semiconductor device includes a semiconductor die, an EMI shield layer shielding the semiconductor die, and an encapsulating portion encapsulating the EMI shield layer. In another example embodiment, the semiconductor device further includes EMI shielding wires extending from the EMI shield layer and shielding the semiconductor die.

A method of forming a solar cell device that includes forming a porous layer in a monocrystalline donor substrate and forming an epitaxial semiconductor layer on the porous layer. A solar cell structure is formed on the epitaxial semiconductor layer. A carrier substrate is bonded to the solar cell structure through a bonding layer. The monocrystalline donor substrate is removed by cleaving the porous layer. A grid of metal contacts is formed on the epitaxial semiconductor layer. The exposed portions of the epitaxial semiconductor layer are removed. The exposed surface of the solar cell structure is textured. The textured surface may be passivated, in which the passivated surface can provide an anti-reflective coating.

A method of forming a solar cell device that includes forming a porous layer in a monocrystalline donor substrate and forming an epitaxial semiconductor layer on the porous layer. A solar cell structure is formed on the epitaxial semiconductor layer. A carrier substrate is bonded to the solar cell structure through a bonding layer. The monocrystalline donor substrate is removed by cleaving the porous layer. A grid of metal contacts is formed on the epitaxial semiconductor layer. The exposed portions of the epitaxial semiconductor layer are removed. The exposed surface of the solar cell structure is textured. The textured surface may be passivated, in which the passivated surface can provide an anti-reflective coating.

In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.

In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.

A device is provided. The device includes one or more of a singular die, one of another die, a printed circuit board, and a substrate, and one or more solder balls. The singular die includes one or more reconditioned die pads, which include die pads of the singular die with a plurality of metallic layers applied. The other die, printed circuit board, and the substrate include one or more bond pads. The one or more solder balls are between the one or more reconditioned die pads and the one or more bond pads.

A device is provided. The device includes one or more of a singular die, one of another die, a printed circuit board, and a substrate, and one or more solder balls. The singular die includes one or more reconditioned die pads, which include die pads of the singular die with a plurality of metallic layers applied. The other die, printed circuit board, and the substrate include one or more bond pads. The one or more solder balls are between the one or more reconditioned die pads and the one or more bond pads.

A contact region for a semiconductor substrate is disclosed. Embodiments can include forming a seed metal layer having an exposed solder pad region on the semiconductor substrate and forming a first metal layer on the seed metal layer. In an embodiment, a solderable material, such as silver, can be formed on the exposed solder pad region prior to forming the first metal layer. Embodiments can include forming a solderable material on the exposed solder pad region after forming the first metal layer. Embodiments can also include forming a plating contact region on the seed metal layer, where the plating contact region allows for electrical conduction during a plating process.