A semiconductor device includes a composite chip mounted over the a wiring substrate, the composite chip including a first area and a second area that is provided independently from the first area, the first area including a first circuit formed in the first area, and the second area including a second circuit formed in the second area.

A method for manufacturing electronic chips includes forming, on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed beforehand, metallizations coupling contacts of adjacent integrated circuits to one another. The method further includes forming, on the side of the first face of the substrate, first trenches extending through the first face of the substrate and laterally separating the adjacent integrated circuits. The first trenches extend through the metallizations to form at least a portion of metallizations at each of the adjacent circuits.

A method of forming a packaged semiconductor device includes attaching a backside surface of a semiconductor die to a major surface of a package substrate. A first conductive connector is formed over a portion of an active surface of the semiconductor die and a portion of the major surface of the package substrate. A first conductive connection between a first bond pad of the semiconductor die and a first substrate pad of the package substrate is formed by way of the first conductive connector. A bond wire connects a second bond pad of the semiconductor die to a second substrate pad of the package substrate. The first bond pad located between the second bond pad and an edge of the semiconductor die.

An array substrate including a substrate, a plurality of fan-out traces and a plurality of bonding terminals. The substrate includes a display area and a non-display area surrounding the display area. The fan-out traces and the bonding terminals are disposed in the non-display area. The bonding terminals are spaced apart from each other. First ends of the fan-out traces are respectively electrically connected to the bonding terminals. Second ends of the fan-out traces are electrically connected to the display area. The fan-out traces include a plurality of first fan-out traces and a plurality of second fan-out traces. The first fan-out traces are formed by a first metal layer. The second fan-out traces are formed by a second metal layer. An insulating layer is provided between the first metal layer and the second metal layer. The first fan-out traces and the second fan-out traces are partially overlapped.

A semiconductor device includes a semiconductor chip which includes a first circuit and a second circuit that are spaced apart from each other, without internal wirings electrically connecting the first circuit and the second circuit to each other, a substrate on which the semiconductor chip is disposed, and substrate wirings that are arranged on the substrate and electrically connect the first circuit and the second circuit to each other.

A display panel includes: a display substrate including a display area and a pad area spaced apart from a side of the display area in a first direction; and first to (n)th signal pads (where n is an integer of 2 or more) in the pad area on the display substrate, extending in the first direction, and spaced apart from each other in a second direction perpendicular to the first direction, wherein a (k)th signal pad among the first to (n)th signal pads (where k is an integer between 1 and n) is between the first signal pad and the (n)th signal pad, wherein a length of each of (k)th to (n)th signal pads among the first to (n)th signal pads along the first direction gradually increases, and wherein a width of each of the (k)th to (n)th signal pads along the second direction gradually decreases.

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

A semiconductor package includes a first chip, an insulating protection layer, a second chip, a plurality of second conductive bumps and an underfill. The insulating protection layer is disposed on a first active surface of the first chip and includes a concave. Projections of a plurality of first inner pads and a plurality of first outer pads of the first chip projected on the insulating protection layer are located in the concave and out of the concave, respectively. The second chip is flipped on the concave and includes a plurality of second pads. Each of the first inner pads is electrically connected to the corresponding second pad through the corresponding second conductive bump. The underfill is disposed between the concave and the second chip and covers the second conductive bumps.

A light emitting device includes a printed circuit board (PCB) including a connection pad, a base substrate mounted on the PCB and including a pixel region and a pad region, light emitting structures arranged on the pixel region, a barrier rib structure disposed on the pixel region and disposed at a vertical level different from the light emitting structures, the barrier rib structure including barrier ribs connected with each other to define each of pixel spaces, a phosphor layer filling each pixel space, a dam structure surrounding the barrier rib structure, a pad disposed on the pad region and adjacent to at least one side of an outer boundary of the light emitting structures, a bonding wire connecting the connection pad to the pad, and a molding structure covering the pad, the connection pad, the bonding wire, and at least a portion of the dam structure.

The present disclosure relates to the field of integrated circuit package design and, more particularly, to packages using a bumpless build-up layer (BBUL) designs. Embodiments of the present description relate to the field of fabricating microelectronic packages, wherein an interposer, such as a through-silicon via interposer, may be used in a bumpless build-up layer package to facilitate stacked microelectronic components.