Structures and methods for directly testing a semiconductor wafer having micro-solder connections. According to one embodiment, a method forms a pattern of micro-solder connections coupled with a through substrate via (TSV) that can be directly tested by electrical probing, without the use of a testing interposer. According to another embodiment, a method tests the pattern of micro-solder connections. According to another embodiment, a novel electrical probe tip structure has contacts on the same pitch as the pattern of micro-solder connections.

According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.

According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.

A reversable attachment system includes an adhesion layer, an inter-substrate bond structure, a mating layer and an extension actuator. The adhesion layer is configured to attach to a first substrate. The inter-substrate bond structure is coupled to the adhesion layer. The mating layer is configured to attach to a second substrate. The extension actuator is configured to attach to the second substrate and expand in response to an absorption of a gas. The inter-substrate bond structure is configured to form an initial thermocompression bond with the mating layer in response to an applied pressure and an applied heat. The expansion of the extension actuator in response to absorbing the gas detaches the inter-substrate bond structure from the mating layer.

Produced is a metal ball which suppresses an emitted dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

Produced is a metal ball which suppresses an emitted dose. Contained are the steps of melting a pure metal by heating the pure metal at a temperature which is higher than a boiling point of an impurity to be removed, higher than a melting point of the pure metal, and lower than a boiling point of the pure metal, the pure metal containing a U content of 5 ppb or less, a Th content of 5 ppb or less, purity of 99.9% or more and 99.995% or less, and a Pb or Bi content or a total content of Pb and Bi of 1 ppm or more, and the pure metal having the boiling point higher than the boiling point at atmospheric pressure of the impurity to be removed; and sphering the molten pure metal in a ball.

A core material including a core and a solder plating layer of a (SnBi)-based solder alloy made of Sn and Bi on a surface of the core. Bi in the solder plating layer is distributed in the solder plating layer at a concentration ratio in a predetermined range of, for example, 91.7% to 106.7%. Bi in the solder plating layer is homogeneous, and thus, a Bi concentration ratio is in a predetermined range over the entire solder plating layer including an inner circumference side and an outer circumference side in the solder plating layer.

Structures and methods for directly testing a semiconductor wafer having micro-solder connections. According to one embodiment, a method forms a pattern of micro-solder connections coupled with a through substrate via (TSV) that can be directly tested by electrical probing, without the use of a testing interposer. According to another embodiment, a method tests the pattern of micro-solder connections. According to another embodiment, a novel electrical probe tip structure has contacts on the same pitch as the pattern of micro-solder connections.

Structures and methods for directly testing a semiconductor wafer having micro-solder connections. According to one embodiment, a method forms a pattern of micro-solder connections coupled with a through substrate via (TSV) that can be directly tested by electrical probing, without the use of a testing interposer. According to another embodiment, a method tests the pattern of micro-solder connections. According to another embodiment, a novel electrical probe tip structure has contacts on the same pitch as the pattern of micro-solder connections.

According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.