The present disclosure relates to bonding structures useful in semiconductor packages. In an embodiment, a semiconductor device includes a semiconductor element, two pillar structures, and an insulation layer. The semiconductor element has a surface and includes at least one bonding pad disposed adjacent to the surface. The two pillar structures are disposed on a single bonding pad. The insulation layer is disposed adjacent to the surface of the semiconductor element. The insulation layer defines an opening, the opening exposes a portion of the single bonding pad, and the two pillar structures are disposed in the opening.

The present disclosure relates to bonding structures useful in semiconductor packages. In an embodiment, a semiconductor device includes a semiconductor element, two pillar structures, and an insulation layer. The semiconductor element has a surface and includes at least one bonding pad disposed adjacent to the surface. The two pillar structures are disposed on a single bonding pad. The insulation layer is disposed adjacent to the surface of the semiconductor element. The insulation layer defines an opening, the opening exposes a portion of the single bonding pad, and the two pillar structures are disposed in the opening.

Semiconductor devices and manufacturing methods are provided for using a Recon interposer that provides a high density interface between the active semiconductor die and the semiconductor substrate and also provides the pitch fan-out. For example, a circuit assembly includes a silicon pad layer including a plurality of metal pads, each metal pad configured to receive a corresponding bump of a plurality of bumps. The circuit assembly further includes an oxide layer disposed on the silicon pad layer and an interposer dielectric layer disposed on the oxide layer. The interposer dielectric layer includes a plurality of routing traces that connect a top surface of the redistribution layer to a bottom surface of the interposer dielectric layer. The circuit assembly further includes an integrated circuit (IC) die attached to the plurality of routing traces at the top surface of the interposer dielectric layer using a plurality of IC bumps and an encapsulating material encapsulating at least a portion of the silicon pad layer, the oxide layer, the interposer dielectric layer, and the IC die to provide structural support for the circuit assembly.

Semiconductor devices and manufacturing methods are provided for using a Recon interposer that provides a high density interface between the active semiconductor die and the semiconductor substrate and also provides the pitch fan-out. For example, a circuit assembly includes a silicon pad layer including a plurality of metal pads, each metal pad configured to receive a corresponding bump of a plurality of bumps. The circuit assembly further includes an oxide layer disposed on the silicon pad layer and an interposer dielectric layer disposed on the oxide layer. The interposer dielectric layer includes a plurality of routing traces that connect a top surface of the redistribution layer to a bottom surface of the interposer dielectric layer. The circuit assembly further includes an integrated circuit (IC) die attached to the plurality of routing traces at the top surface of the interposer dielectric layer using a plurality of IC bumps and an encapsulating material encapsulating at least a portion of the silicon pad layer, the oxide layer, the interposer dielectric layer, and the IC die to provide structural support for the circuit assembly.

A reversable attachment system includes an adhesion layer, an inter-substrate bond structure, a mating layer and an extension actuator. The adhesion layer is configured to attach to a first substrate. The inter-substrate bond structure is coupled to the adhesion layer. The mating layer is configured to attach to a second substrate. The extension actuator is configured to attach to the second substrate and expand in response to an absorption of a gas. The inter-substrate bond structure is configured to form an initial thermocompression bond with the mating layer in response to an applied pressure and an applied heat. The expansion of the extension actuator in response to absorbing the gas detaches the inter-substrate bond structure from the mating layer.