Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.

Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.

Various embodiments of the teachings herein include a semifinished product for use in the populating of a power electronics component by a connecting method. The product includes an electrically insulating prepreg frame electrically insulated. The prepreg frame is configured for surrounding an applied connecting material at a metallized installation site during the population. A material of the prepreg frame enables simultaneous processability of electrical connection and electrical insulation by compression of the insulation material in the form of the semifinished product since the processing parameters of the electrical connecting material and the semifinished product are compatible.

Various embodiments of the teachings herein include a semifinished product for use in the populating of a power electronics component by a connecting method. The product includes an electrically insulating prepreg frame electrically insulated. The prepreg frame is configured for surrounding an applied connecting material at a metallized installation site during the population. A material of the prepreg frame enables simultaneous processability of electrical connection and electrical insulation by compression of the insulation material in the form of the semifinished product since the processing parameters of the electrical connecting material and the semifinished product are compatible.

Integrated circuit assemblies, electronic systems, and methods for fabricating the same are disclosed. An integrated circuit assembly is formed by thermally contacting at least two integrated circuit packages to opposite sides of a shared heat dissipation device. In one embodiment, the at least two integrated circuit packages are electrically attached to an electronic card to form an intermediate integrated circuit assembly. In a further embodiment, the integrated circuit assembly includes at least one intermediate integrated circuit assembly electrically attached to an electronic board.

Integrated circuit assemblies, electronic systems, and methods for fabricating the same are disclosed. An integrated circuit assembly is formed by thermally contacting at least two integrated circuit packages to opposite sides of a shared heat dissipation device. In one embodiment, the at least two integrated circuit packages are electrically attached to an electronic card to form an intermediate integrated circuit assembly. In a further embodiment, the integrated circuit assembly includes at least one intermediate integrated circuit assembly electrically attached to an electronic board.

Semiconductor devices having redistribution structures, and associated systems and methods, are disclosed herein. In some embodiments, a semiconductor assembly comprises a die stack including a plurality of semiconductor dies, and a routing substrate mounted on the die stack. The routing substrate includes an upper surface having a redistribution structure. The semiconductor assembly also includes a plurality of electrical connectors coupling the redistribution structure to at least some of the semiconductor dies. The semiconductor assembly further includes a controller die mounted on the routing substrate. The controller die includes an active surface that faces the upper surface of the routing substrate and is electrically coupled to the redistribution structure, such that the routing substrate and the semiconductor dies are electrically coupled to the controller die via the redistribution structure.

Semiconductor devices having redistribution structures, and associated systems and methods, are disclosed herein. In some embodiments, a semiconductor assembly comprises a die stack including a plurality of semiconductor dies, and a routing substrate mounted on the die stack. The routing substrate includes an upper surface having a redistribution structure. The semiconductor assembly also includes a plurality of electrical connectors coupling the redistribution structure to at least some of the semiconductor dies. The semiconductor assembly further includes a controller die mounted on the routing substrate. The controller die includes an active surface that faces the upper surface of the routing substrate and is electrically coupled to the redistribution structure, such that the routing substrate and the semiconductor dies are electrically coupled to the controller die via the redistribution structure.

An integrated circuit package may be formed comprising a substrate that includes a mold material layer and a signal routing layer, wherein the mold material layer comprises at least one bridge and at least one foam structure embedded in a mold material. In one embodiment, the substrate may include the mold material of the mold material layer filling at least a portion of cells within the foam structure. In a further embodiment, at least two integrated circuit devices may be attached to the substrate, such that the bridge provides device-to-device interconnection between the at least two integrated circuit devices. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board.

An integrated circuit package may be formed comprising a substrate that includes a mold material layer and a signal routing layer, wherein the mold material layer comprises at least one bridge and at least one foam structure embedded in a mold material. In one embodiment, the substrate may include the mold material of the mold material layer filling at least a portion of cells within the foam structure. In a further embodiment, at least two integrated circuit devices may be attached to the substrate, such that the bridge provides device-to-device interconnection between the at least two integrated circuit devices. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board.