A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a conductive pad having a first surface and an opposing second surface; a conductive via coupled to the first surface of the conductive pad; a microelectronic component having a conductive contact, the conductive contact of the microelectronic component electrically coupled, by an interconnect, to the second surface of the conductive pad, wherein a material of the interconnect includes nickel or tin; and a liner between the interconnect and the second surface of the conductive pad, and wherein a material of the liner includes nickel, palladium, or gold. In some embodiments, a bottom surface of the liner is curved outward towards the conductive pad. In some embodiments, the liner also may be on side surfaces of the interconnect.

Semiconductor devices are provided. The semiconductor device includes a first dielectric layer, a bump, an etching stop layer and a spacer. The first dielectric layer is disposed over and exposes a conductive structure. The bump is partially disposed in the first dielectric layer to electrically connect the conductive structure. The etching stop layer is disposed over the first dielectric layer aside the bump. The spacer surrounds the bump and disposed between the etching stop layer and the bump.

A microelectronic substrate may be formed to have an embedded trace which includes an integral attachment structure that extends beyond a first surface of a dielectric layer of the microelectronic substrate for the attachment of a microelectronic device. In one embodiment, the embedded trace may be fabricated by forming a dummy layer, forming a recess in the dummy layer, conformally depositing surface finish in the recess, forming an embedded trace layer on the dummy layer and abutting the surface finish, and removing the dummy layer.

A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

A semiconductor device and a manufacturing method for the semiconductor device are provided. The semiconductor device includes a first dielectric layer, a bump, an etching stop layer and a spacer. The first dielectric layer is disposed over and exposes a conductive structure. The bump is partially disposed in the first dielectric layer to electrically connect the conductive structure. The etching stop layer is disposed over the first dielectric layer aside the bump a spacer and surrounds the bump and disposed between the etching stop layer and the bump.

A semiconductor device is disclosed. The semiconductor device comprises a first die, a second die, and a redistribution structure. The first die and the second die are electrically connected to the redistribution structure. There are no solder bumps between the first die and the redistribution structure. There are no solder bumps between the second die and the redistribution structure. The first die and the second die have a shift with regard to each other from a top view.

A metallic interconnection and a semiconductor arrangement including the same are described, wherein a method of manufacturing the same may include: providing a first structure including a first metallic layer having protruding first microstructures; providing a second structure including a second metallic layer having protruding second microstructures; contacting the first and second microstructures to form a mechanical connection between the structures, the mechanical connection being configured to allow fluid penetration; removing one or more non-metallic compounds on the first metallic layer and the second metallic layer with a reducing agent that penetrates the mechanical connection and reacts with the one or more non-metallic compounds; and heating the first metallic layer and the second metallic layer at a temperature causing interdiffusion of the first metallic layer and the second metallic layer to form the metallic interconnection between the structures.

The present disclosure relates to the technical field of semiconductor packaging, and discloses a semiconductor structure and a method for forming the same. The method includes: providing a chip, the chip having interconnect structures on its surface, the top of the interconnect structures having an exposed fusible portion; providing a substrate, the substrate having conductive structures on its surface; patterning the conductive structures so that edges of the conductive structures have protrusions; combining the chip with the substrate.