In some embodiments, an interconnection structure can electrically and physically couple a first semiconductor die and a second semiconductor die. The interconnection structure can include a first portion at the first semiconductor die and a second portion at the second semiconductor die. The first portion can include a first conductive pillar with a concave bonding surface, a first annular barrier layer, and a first annular solder layer. The first annular barrier layer can surround a sidewall of the first conductive pillar, and the first annular solder layer can surround the first barrier layer. The second portion can include a second conductive pillar having a convex bonding surface, the convex bonding surface coupled to the concave bonding surface. The second interconnection structure can further include a second annular solder layer surrounding a second annular barrier layer surrounding the second conductive pillar.

An electronic component with high coplanarity, including a body with a functional circuit and a mounting plane, a first electrode with a first area deposited on the mounting plane, and a second electrode with a second area deposited on the mounting plane, wherein the first area is larger than the second area, and the first electrode and the second electrode includes a conductive layer and at least one first plating layer over the conductive layer, and a thickness of the conductive layer of the first electrode is smaller than a thickness of the conductive layer of the second electrode, and a thickness of the first plating layer of the first electrode is larger than a thickness of the first plating layer of the second electrode.

An aspect of the present invention provides a metal pillar in a columnar shape formed by cutting a metal wire to a predetermined length. The metal pillar has a burr length of 0.1 to 0.5 ?m on the cutting surface, an electrical conductivity of 11 to 101% IACS, and a Vickers hardness of 150 to 300 HV.

A microelectronic device includes a die with input/output (I/O) terminals, and a dielectric layer on the die. The microelectronic device includes electrically conductive pillars which are electrically coupled to the I/O terminals, and extend through the dielectric layer to an exterior of the microelectronic device. Each pillar includes a column electrically coupled to one of the I/O terminals, and a head contacting the column at an opposite end of the column from the I/O terminal. The head extends laterally past the column in at least one lateral direction. Methods of forming the pillars and the dielectric layer are disclosed.

A microelectronic device includes a die with input/output (I/O) terminals, and a dielectric layer on the die. The microelectronic device includes electrically conductive pillars which are electrically coupled to the I/O terminals, and extend through the dielectric layer to an exterior of the microelectronic device. Each pillar includes a column electrically coupled to one of the I/O terminals, and a head contacting the column at an opposite end of the column from the I/O terminal. The head extends laterally past the column in at least one lateral direction. Methods of forming the pillars and the dielectric layer are disclosed.

A method for manufacturing a package includes positioning a copper layer above a die. A zinc layer is positioned on the copper layer. The zinc and copper layers are then heated to produce a brass layer, the brass layer abutting the copper layer. Further, a polymer layer is positioned abutting the brass layer.

A microelectronic device includes a die with input/output (I/O) terminals, and a dielectric layer on the die. The microelectronic device includes electrically conductive pillars which are electrically coupled to the I/O terminals, and extend through the dielectric layer to an exterior of the microelectronic device. Each pillar includes a column electrically coupled to one of the I/O terminals, and a head contacting the column at an opposite end of the column from the I/O terminal. The head extends laterally past the column in at least one lateral direction. Methods of forming the pillars and the dielectric layer are disclosed.

A microelectronic device includes a die with input/output (I/O) terminals, and a dielectric layer on the die. The microelectronic device includes electrically conductive pillars which are electrically coupled to the I/O terminals, and extend through the dielectric layer to an exterior of the microelectronic device. Each pillar includes a column electrically coupled to one of the I/O terminals, and a head contacting the column at an opposite end of the column from the I/O terminal. The head extends laterally past the column in at least one lateral direction. Methods of forming the pillars and the dielectric layer are disclosed.

A method of manufacturing a bonding structure includes (a) providing a substrate, wherein the substrate includes a top surface and at least one bonding pad disposed adjacent to the top surface of the substrate, at least one bonding pad having a sloped surface with a first slope; (b) providing a semiconductor element, wherein the semiconductor element includes at least one pillar, and at least one pillar has a sidewall with a second slope, wherein the absolute value of the first slope is smaller than the absolute value of the second slope; and (c) bonding at least one pillar to a portion of the sloped surface of corresponding ones of the at least one bonding pad.

A method of manufacturing a bonding structure includes (a) providing a substrate, wherein the substrate includes a top surface and at least one bonding pad disposed adjacent to the top surface of the substrate, at least one bonding pad having a sloped surface with a first slope; (b) providing a semiconductor element, wherein the semiconductor element includes at least one pillar, and at least one pillar has a sidewall with a second slope, wherein the absolute value of the first slope is smaller than the absolute value of the second slope; and (c) bonding at least one pillar to a portion of the sloped surface of corresponding ones of the at least one bonding pad.