A bond layer including at least one metal region in a plan view is disposed on a surface layer portion of a substrate formed from a semiconductor. A semiconductor element is disposed on the bond layer and includes a first transistor disposed on a first metal region that is a metal region as the at least one metal region of the bond layer and including a collector layer electrically coupled to the first metal region, a base layer disposed on the collector layer, and an emitter layer disposed on the base layer. A first emitter electrode is disposed on the emitter layer of the first transistor. A first conductor protrusion is disposed on the first emitter electrode. The thermal conductivity of the semiconductor material of the surface layer portion is higher than that of each of the collector layer, the base layer, and the emitter layer of the first transistor.

The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

Provided is a semiconductor package including a first bump pad on a first substrate, a second bump pad on a second substrate, a core material for reverse reflow between the first bump pad and the second bump pad, and a solder member forming a solder layer on the core material for reverse reflow. The solder member is in contact with the first bump pad and the second bump pad. Each of a first diameter of the first bump pad and a second diameter of the second bump pad is at least about 1.1 times greater than a third diameter of the core material for reverse reflow. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.

Provided is a semiconductor package including a first bump pad on a first substrate, a second bump pad on a second substrate, a core material for reverse reflow between the first bump pad and the second bump pad, and a solder member forming a solder layer on the core material for reverse reflow. The solder member is in contact with the first bump pad and the second bump pad. Each of a first diameter of the first bump pad and a second diameter of the second bump pad is at least about 1.1 times greater than a third diameter of the core material for reverse reflow. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.

A mounting structure includes a first substrate that has a first surface on which a functional element is provided, a wiring that is provided at a position which is different from a position of the functional element on the first surface, and is connected to the functional element, a second substrate that has a second surface facing the first surface, and a conductor that is provided on the second surface, and is connected to the wiring and the functional element, in which the shortest distance between the functional element and the second substrate is longer than a distance between a position where the wiring is connected to the conductor, and the second substrate.

A wiring substrate includes a resin insulating layer, a via conductor formed in the resin insulating layer such that the via conductor is penetrating through the resin insulating layer, a conductor pad formed on the resin insulating layer and connected to the via conductor, a coating insulating layer formed on the resin insulating layer such that the coating insulating layer is covering the conductor pad, and a metal post formed on the conductor pad and protruding from the coating insulating layer. The via conductor is formed such that the via conductor is increased in diameter toward the conductor pad, and the metal post is formed such that the metal post is increased in diameter toward the conductor pad.

A wiring substrate includes a resin insulating layer, a via conductor formed in the resin insulating layer such that the via conductor is penetrating through the resin insulating layer, a conductor pad formed on the resin insulating layer and connected to the via conductor, a coating insulating layer formed on the resin insulating layer such that the coating insulating layer is covering the conductor pad, and a metal post formed on the conductor pad and protruding from the coating insulating layer. The via conductor is formed such that the via conductor is increased in diameter toward the conductor pad, and the metal post is formed such that the metal post is increased in diameter toward the conductor pad.

In an embodiment, a quantum device includes a first set of protrusions formed on a substrate and a second set of protrusions formed on a qubit chip. In the embodiment, the quantum device includes a set of bumps formed on an interposer, the set of bumps formed of a material having above a threshold ductility at a room temperature range, wherein a first subset of the set of bumps is configured to cold weld to the first set of protrusions and a second subset of the set of bumps is configured to cold weld to the second set of protrusions.

In an embodiment, a quantum device includes a first set of protrusions formed on a substrate and a second set of protrusions formed on a qubit chip. In the embodiment, the quantum device includes a set of bumps formed on an interposer, the set of bumps formed of a material having above a threshold ductility at a room temperature range, wherein a first subset of the set of bumps is configured to cold weld to the first set of protrusions and a second subset of the set of bumps is configured to cold weld to the second set of protrusions.