Representative implementations of devices and techniques provide interconnect structures and components for coupling various carriers, printed circuit board (PCB) components, integrated circuit (IC) dice, and the like, using tall and/or fine pitch physical connections. Multiple layers of conductive structures or materials are arranged to form the interconnect structures and components. Nonwettable barriers may be used with one or more of the layers to form a shape, including a pitch of one or more of the layers.

A method of fabrication of a semiconducting structure intended to be assembled to a second support by hybridisation. The semiconducting structure comprising an active layer comprising a nitrided semiconductor. The method comprises a step for the formation of at least one first and one second insert and during this step, a nickel layer is formed in contact with the support surface, and a localised physico-chemical etching step of the active layer, a part of the active layer comprising the active region being protected by the nickel layer.

In an MEMS device, in a Z direction that is a direction in which a first core portion, a plurality of first bump wiring, and a plurality of first individual wiring are laminated, a width between the first core portion and a wiring substrate is wider than a maximum particle diameter of solid particles contained in an adhesive, and a width between a first wiring and a second wiring and a width between a third wiring and a fourth wiring are wider than the maximum particle diameter of the solid particles.

In an MEMS device, in a Z direction that is a direction in which a first core portion, a plurality of first bump wiring, and a plurality of first individual wiring are laminated, a width between the first core portion and a wiring substrate is wider than a maximum particle diameter of solid particles contained in an adhesive, and a width between a first wiring and a second wiring and a width between a third wiring and a fourth wiring are wider than the maximum particle diameter of the solid particles.

A resin-encapsulated semiconductor device includes a bump electrode formed on an element surface side of a semiconductor chip, a conductive layer electrically connected to the bump electrode, and a resin encapsulation body covering the semiconductor chip, the bump electrode, and the conductive layer. On a back surface of the semiconductor chip that is flush with a back surface of the resin encapsulation body, a metal layer and a laminated film are formed. The laminated film is formed on a front surface of the conductive layer, and an external terminal is arranged on an inner side of an outer edge of the semiconductor chip.

A semiconductor device includes an interconnect substrate, an interconnect trace disposed on an upper surface of the interconnect substrate, a semiconductor chip mounted on the upper surface of the interconnect substrate, an adhesive resin layer disposed between the upper surface of the interconnect substrate and a lower surface of the semiconductor chip to bond the interconnect substrate and the semiconductor chip, the adhesive resin layer including an opening at a bottom of which an upper surface of the interconnect trace is situated, a barrier layer covering a sidewall of the opening, and conductive paste disposed inside the opening, wherein an electrode terminal of the semiconductor chip situated at the lower surface thereof is disposed inside the opening, with the conductive paste filling a space between the barrier layer and the electrode terminal.

A semiconductor device includes an interconnect substrate, an interconnect trace disposed on an upper surface of the interconnect substrate, a semiconductor chip mounted on the upper surface of the interconnect substrate, an adhesive resin layer disposed between the upper surface of the interconnect substrate and a lower surface of the semiconductor chip to bond the interconnect substrate and the semiconductor chip, the adhesive resin layer including an opening at a bottom of which an upper surface of the interconnect trace is situated, a barrier layer covering a sidewall of the opening, and conductive paste disposed inside the opening, wherein an electrode terminal of the semiconductor chip situated at the lower surface thereof is disposed inside the opening, with the conductive paste filling a space between the barrier layer and the electrode terminal.

A resin-encapsulated semiconductor device includes a bump electrode formed on an element surface side of a semiconductor chip, a conductive layer electrically connected to the bump electrode, and a resin encapsulation body covering the semiconductor chip, the bump electrode, and the conductive layer. On a back surface of the semiconductor chip that is flush with a back surface of the resin encapsulation body, a metal layer and a laminated film are formed. The laminated film is formed on a front surface of the conductive layer, and an external terminal is arranged on an inner side of an outer edge of the semiconductor chip.

A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions

A multi-layer pillar and method of fabricating the same is provided. The multi-layer pillar is used as an interconnect between a chip and substrate. The pillar has at least one low strength, high ductility deformation region configured to absorb force imposed during chip assembly and thermal excursions