A semiconductor chip, a display device or an electronic device includes a substrate, one or more conductive pads disposed on the substrate, and one or more bumps electrically connected to the one or more conductive pads, in which the one or more bumps includes a metal core, a polymer layer disposed over a surface of the metal core, and a conductive coating layer disposed over a surface of the polymer layer and electrically connected to the one or more conductive pads.

A semiconductor chip, a display device or an electronic device includes a substrate, one or more conductive pads disposed on the substrate, and one or more bumps electrically connected to the one or more conductive pads, in which the one or more bumps includes a metal core, a polymer layer disposed over a surface of the metal core, and a conductive coating layer disposed over a surface of the polymer layer and electrically connected to the one or more conductive pads.

A method providing a high aspect ratio through substrate via in a substrate is described. The through substrate via has vertical sidewalls and a horizontal bottom. The substrate has a horizontal field area surrounding the through substrate via. A first metallic barrier layer is deposited on the sidewalls of the through substrate via. A nitridation process converts a surface portion of the metallic barrier layer to a nitride surface layer. The nitride surface layer enhances the nucleation of subsequent depositions. A first metal layer is deposited to fill the through substrate via. A selective etch creates a recess in the first metal layer in the through substrate via. A second barrier layer is deposited over the recess. A second metal layer is patterned over the second barrier layer filling the recess and creating a contact. Another aspect of the invention is a device produced by the method.

A method providing a high aspect ratio through substrate via in a substrate is described. The through substrate via has vertical sidewalls and a horizontal bottom. The substrate has a horizontal field area surrounding the through substrate via. A first metallic barrier layer is deposited on the sidewalls of the through substrate via. A nitridation process converts a surface portion of the metallic barrier layer to a nitride surface layer. The nitride surface layer enhances the nucleation of subsequent depositions. A first metal layer is deposited to fill the through substrate via. A selective etch creates a recess in the first metal layer in the through substrate via. A second barrier layer is deposited over the recess. A second metal layer is patterned over the second barrier layer filling the recess and creating a contact. Another aspect of the invention is a device produced by the method.