A semiconductor device includes a first die; a second die attached over the first die; a first metal enclosure and a second metal enclosure both directly contacting and vertically extending between the first die and the second die, wherein the first metal enclosure peripherally encircles a set of one or more internal interconnects and the second metal enclosure peripherally encircles the first metal enclosure without directly contacting the first metal enclosure; a first enclosure connector electrically connecting the first metal enclosure to a first voltage level; a second enclosure connector electrically connecting the second metal enclosure to a second voltage level; and wherein the first metal enclosure, the second metal enclosure, the first enclosure connector, and the second enclosure connector are configured to provide an enclosure capacitance.

A semiconductor device includes a first die; a first metal enclosure directly contacting and vertically extending below the first die, wherein the first metal enclosure peripherally encircles a first enclosed space; a second die directly contacting the first metal enclosure opposite the first die; a second metal enclosure directly contacting and vertically extending below the second die, wherein the second metal enclosure peripherally encircles a second enclosed space; and an enclosure connection mechanism directly contacting the first metal enclosure and the second metal enclosure for electrically coupling the first metal enclosure and the second metal enclosure.

A semiconductor device includes a substrate, a package, first conductors and second conductors. The substrate includes a first surface and a second surface opposite to the first surface. The package is disposed over the substrate. The first conductors are disposed over the substrate. The second conductors are disposed over the substrate, wherein the first conductors and the second conductors are substantially at a same tier, and a width of the second conductor is larger than a width of the first conductor.

Electronic assemblies and methods including the formation of interconnect structures are described. In one embodiment an apparatus includes semiconductor die and a first metal bump on the die, the first metal bump including a surface having a first part and a second part. The apparatus also includes a solder resistant coating covering the first part of the surface and leaving the second part of the surface uncovered. Other embodiments are described and claimed.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate, an electrical connection structure extending upwardly from an upper surface of the substrate by a first height, and a contact pad electrically disposed on the upper surface of the substrate. The contact pad has a solder-wettable surface with an area configured to support a solder ball having a second height at least twice the first height. The semiconductor device structure further includes a fuse element with a first end electrically coupled to the electrical connection structure and a second end electrically coupled to the contact pad.

A display device includes a substrate including a conductive pad, a driving chip facing the substrate and including a conductive bump electrically connected to the conductive pad and an inspection bump which is insulated from the conductive pad, and an adhesive member which is between the conductive pad and the driving chip and connects the conductive pad to the driving chip. The adhesive member includes a first adhesive layer including a conductive ball, and a second adhesive layer facing the first adhesive layer, the second adhesive layer including a first area including a color-changing material, and a second area adjacent to the first area and excluding the color-changing material.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate, an electrical connection structure extending upwardly from an upper surface of the substrate by a first height, and a contact pad electrically disposed on the upper surface of the substrate. The contact pad has a solder-wettable surface with an area configured to support a solder ball having a second height at least twice the first height. The semiconductor device structure further includes a fuse element with a first end electrically coupled to the electrical connection structure and a second end electrically coupled to the contact pad.

Disclosed is a semiconductor package. The semiconductor package may include a substrate a semiconductor chip mounted over a surface of the substrate such that an active surface of the semiconductor chip faces the surface of the substrate. The semiconductor chip and substrate may be configured for shielding or scattering electromagnetic waves.

A semiconductor device includes a substrate, a package, first conductors and second conductors. The substrate includes a first surface and a second surface opposite to the first surface. The package is disposed over the substrate. The first conductors are disposed over the substrate. The second conductors are disposed over the substrate, wherein the first conductors and the second conductors are substantially at a same tier, and a width of the second conductor is larger than a width of the first conductor.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate, an electrical connection structure extending upwardly from an upper surface of the substrate by a first height, and a contact pad electrically disposed on the upper surface of the substrate. The contact pad has a solder-wettable surface with an area configured to support a solder ball having a second height at least twice the first height. The semiconductor device structure further includes a fuse element with a first end electrically coupled to the electrical connection structure and a second end electrically coupled to the contact pad.