A manufacturing method of a semiconductor structure includes at least the following steps. An encapsulated semiconductor die is disposed on a first surface of a circuit carrier to be in electrical contact with the circuit carrier. A second surface of the circuit carrier and an edge of the circuit carrier is protected with a patterned dielectric layer, where the second surface of the circuit carrier is opposite to the first surface, and the edge of the circuit carrier is connected to the second surface. A conductive terminal is formed to penetrate through the patterned dielectric layer to be in electrical contact with the circuit carrier.

A semiconductor package device includes a substrate, an electronic component, and a thermal conductive layer. The electronic component is disposed on the substrate and includes a first surface facing away from the substrate. The thermal conductive layer is disposed above the first surface of the electronic component. The thermal conductive layer includes a plurality of portions spaced apart from each other.

In a described example a device includes: a first corner formed between a circuit side surface of a semiconductor die and a first sidewall formed with a first depth extending along a side of the semiconductor die from the circuit side surface; a ledge having a planar surface formed parallel to the circuit side surface of the semiconductor die formed at the first depth from the circuit side surface at the first corner, and being perpendicular to the first sidewall; a second corner formed by an intersection of the planar surface of the ledge and a scribe lane sidewall of the semiconductor die, forming a second sidewall perpendicular to the circuit side surface; and portions of the circuit side surface of the semiconductor die, the first corner, the first sidewall, and the planar surface of the ledge covered by a passivation layer.

A semiconductor structure includes a circuit carrier, a dielectric layer, a conductive terminal, a semiconductor die, and an insulating encapsulation. The circuit carrier includes a first surface and a second surface opposite to each other, a sidewall connected to the first and second surfaces, and an edge between the second surface and the sidewall. The dielectric layer is disposed on the second surface of the circuit carrier and extends to at least cover the edge of the circuit carrier. The conductive terminal is disposed on and partially embedded in the dielectric layer to be connected to the circuit carrier. The semiconductor die encapsulated by the insulating encapsulation is disposed on the first surface of the circuit carrier and electrically coupled to the conductive terminal through the circuit carrier.

An integrated circuit (IC) package including ICs with multi-row columnar die interconnects has increased die-to-die (D2D) interconnect density in a conductive layer. Positioning the die interconnects in die interconnect column clusters, that each include a plurality of die interconnect rows and two columns, reduces the linear dimension occupied by the die interconnects and leaves room for more D2D interconnects. A die interconnect column cluster pitch is a distance between columns of adjacent die interconnect column clusters and this distance is greater than a die interconnect pitch between columns within the column clusters. Die interconnects may be disposed in the space between the multi-row column clusters and additional die interconnects can be disposed at the D2D interconnect pitch between the die interconnect column clusters. IC packages with ICs including the multi-row columnar die interconnects have a greater number of D2D interconnects for better IC integration.

An apparatus, comprising an integrated circuit (IC) package having at least one solder bond pad, a die having at least one solder bond pad, wherein the die is bonded to the IC package by at least one solder joint between the at least one solder bond pad of the die, and the at least one solder bond pad of the IC package, and an underfill material between the IC package and the die, wherein the at least one solder joint is embedded in the underfill material, and wherein the at least one solder joint comprises a first metallurgy and a second metallurgy.

The present application provides a method for forming a chip package and a chip package. The method comprises mounting at least one chipset including at least first and second chips on a carrier with front surface of the chips face away from the carrier; attaching an interconnection device to the front surfaces of the first and second chips to enable electrically connections between the chips; forming a molded encapsulation layer whereby the first chip, the second chip and the interconnection device are embedded or partially embedded in the molded encapsulation layer; thinning one side of the molded encapsulation layer away from the carrier to expose first bumps on the first and second chips; forming second bumps on a surface of one side of the molded encapsulation layer where the first bumps are exposed; and removing the carrier. Thus, a flexible, efficient and low-cost packaging scheme is provided for multi-chip connection.

The present application provides a method for forming chip packages and a chip package. The method comprises arranging a plurality of interconnect devices at intervals on a surface of a carrier and assembling a plurality of chipsets over the interconnect devices. Each chipset comprises at least two chips electrically connected through an interconnect device. A front surface of each chip facing the carrier is provided with a plurality of first bumps. The method further comprises forming a molded package layer whereby the plurality of chipsets and the plurality of interconnect devices are embedded in the molded package layer; removing the carrier and thinning the molded package layer to expose the first bumps; forming second bumps on the surface on one side of the molded package layer where the first bumps are exposed; and dicing the molded package layer to obtain a plurality of package units. Thus, a flexible and low-cost packaging scheme is provided for multi-chip interconnection.

A sensor assembly includes a die substrate and a metalized layer formed on the die substrate. The metalized layer is formed of a first metal material and includes a bonding pad to facilitate electrically coupling the sensor assembly to a sensor system. A remetalized bump is formed on the bonding pad of a second metal material and is electrically coupled to the metalized layer. An adhesive is applied to the remetalized bump and facilitates mechanically coupling the sensor assembly to the sensor system.

The present disclosure relates to a semiconductor package that may include a package substrate with a first surface and an opposing second surface, a first device coupled to the first surface of the package substrate, a redistribution frame coupled to the second surface of the package substrate, a plurality of solder balls coupled to the second surface of the package substrate, a second device coupled to the redistribution frame, and a printed circuit board coupled to the plurality of solder balls on the second surface of substrate, wherein the redistribution frame coupled with the second device and the plurality of solder balls are positioned between the package substrate and the printed circuit board.