H01L2224/1623

METHOD AND STRUCTURE FOR A 3D WIRE BLOCK
20180068867 · 2018-03-08 ·

The present invention provides for a structure and a mechanism by which by utilizing additive manufacturing processes electrical connections are created that connect the top and bottom of a block in a customizable pattern. Specifically connection points can be created on the surface of the block and route them to alternate locations transforming the original pattern to a smaller, larger, or alternate pattern.

MICROELECTRONIC ASSEMBLIES HAVING AN INTEGRATED CAPACITOR
20240405006 · 2024-12-05 ·

Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

SEMICONDUCTOR PACKAGE, PRINTED CIRCUIT BOARD SUBSTRATE AND SEMICONDUCTOR DEVICE
20170271284 · 2017-09-21 ·

A semiconductor package includes: a semiconductor integrated circuit; an interlayer film disposed on the semiconductor integrated circuit; a rewiring layer disposed on the interlayer film; post electrodes disposed on the rewiring layer; a protective layer which is disposed on the interlayer film and covers the rewiring layer and the post electrodes; and a plurality of balls which is respectively disposed on the post electrodes and is connected to the rewiring layer, wherein balls existing on a wiring path of internal wirings connected to inner lands of a plurality of lands, which is arranged on a printed circuit board substrate to face the plurality of balls and is connectable to the plurality of balls, are non-connected to the rewiring layer.

Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces

In a vertically integrated microelectronic package, a first microelectronic device is coupled to an upper surface of a circuit platform in a wire bond-only surface area thereof. Wire bond wires are coupled to and extends away from an upper surface of the first microelectronic device. A second microelectronic device in a face-down orientation is coupled to upper ends of the wire bond wires in a surface mount-only area. The second microelectronic device is located above and at least partially overlaps the first microelectronic device. A protective layer is disposed over the circuit platform and the first microelectronic device. An upper surface of the protective layer has the surface mount-only area. The upper surface of the protective layer has the second microelectronic device disposed thereon in the face-down orientation in the surface mount-only area for coupling to the upper ends of the first wire bond wires.

Semiconductor package, printed circuit board substrate and semiconductor device
09698111 · 2017-07-04 · ·

A semiconductor package includes: a semiconductor integrated circuit; an interlayer film disposed on the semiconductor integrated circuit; a rewiring layer disposed on the interlayer film; post electrodes disposed on the rewiring layer; a protective layer which is disposed on the interlayer film and covers the rewiring layer and the post electrodes; and a plurality of balls which is respectively disposed on the post electrodes and is connected to the rewiring layer, wherein balls existing on a wiring path of internal wirings connected to inner lands of a plurality of lands, which is arranged on a printed circuit board substrate to face the plurality of balls and is connectable to the plurality of balls, are non-connected to the rewiring layer.

PACKAGING ARRANGEMENTS INCLUDING HIGH DENSITY INTERCONNECT BRIDGE
20170125334 · 2017-05-04 ·

Embodiments provide a packaging arrangement that includes a high density interconnect bridge for interconnecting dies within the packaging arrangement. The packaging arrangement comprises one or more redistribution layers and an interconnect bridge embedded within the one or more redistribution layers. A first die is coupled to (i) a first portion of the one or more redistribution layers and (ii) a first portion of the interconnect bridge. A second die coupled to a (ii) a second portion of the one or more redistribution layers and (ii) a second portion of the interconnect bridge to electrically couple the first die and the second die via at least the first interconnect bridge.

LAMINATE CARRIER WITH EMBEDDED ELECTRONIC COMPONENT ELECTRICALLY COUPLED WITH PROTRUDING PIN

An electronic device is disclosed. In one example, the electronic device comprises a laminate carrier comprising a plurality of laminated layers, an electronic component embedded in the laminate carrier, and an at least partially electrically conductive pin extending partially inside the laminate carrier and partially protruding beyond the laminate carrier. The pin is electrically coupled with the electronic component.

SEMICONDUCTOR DEVICE
20170033045 · 2017-02-02 ·

Object is to provide a semiconductor device with fewer malfunctions. The semiconductor device has a semiconductor chip having a first-signal-output circuit operating at a first-power-supply voltage, a second-signal-output circuit operating at a second power supply voltage, and a plurality of bump electrodes; and a wiring board including a first main surface facing the main surface of the semiconductor chip, a second main surface opposite to the first main surface with a wiring layer therebetween, first external terminals on the first main surface, and second ones on the second main surface; the former being mounted on the latter to couple the bump electrodes to the first external terminals. When viewed from the second main surface, second external terminals to be supplied with the first signal and the second signal are arranged closer to the semiconductor chip than second external terminals to be supplied with the first power supply voltage and the second power supply voltage.

Package structure and its fabrication method

This disclosure provides a package structure and its fabrication method. The package structure includes: a protective insulation layer; a wiring layer including at least one metal wire and disposed on the protective insulation layer; and a first package unit disposed on the wiring layer and including a plurality of metal pillars, a first integrated-circuit chip and a first molding compound layer; wherein the plural metal pillars are located in a pillar region and electrically connected to the at least one metal wire, the first integrated-circuit chip is located in a device region and electrically connected to the at least one metal wire, and the first molding compound layer filling up the remaining part of the first package unit.

Semiconductor package and method of fabricating the same
12476225 · 2025-11-18 · ·

A semiconductor package includes a first semiconductor chip mounted on a substrate, a first conductive post disposed on the substrate and spaced apart from the first semiconductor chip, a second semiconductor chip disposed on the first semiconductor chip and the first conductive post, and a mold layer on the substrate that covers the first and second semiconductor chips and the first conductive post. The second semiconductor chip is supported on the first semiconductor chip by a first dummy solder terminal provided between the first and second semiconductor chips, and is coupled to the first conductive post by a first signal solder terminal provided between the first conductive post and the second semiconductor chip. The first dummy solder terminal is in direct contact with a top surface of the first semiconductor chip, and is electrically disconnected from the second semiconductor chip.