A semiconductor packaging structure manufactured in a manner which does not leave the chip damaged or susceptible to damage upon the removal of temporary manufacturing supports includes at least one electrical conductor, at least one conductive layer, a chip, and a colloid. The chip is spaced from the conductive layer, the electrical conductor is disposed between the conductive layer and the chip and electrically connects the conductive layer to the chip. The colloid covers all outer surfaces of the chip. A method of fabricating such a semiconductor packaging structure is also provided.

A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. A first solder resist (SR) layer is formed on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. A second solder resist (SR) layer is formed on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.

This invention provides a high-yielding and high-density/ultra-fine pitch package for ultra-large-scale ICs and advanced ICs. The package includes a substrate and a semiconductor chip. The substrate has a passivation layer covering a first surface of the substrate, wherein a plurality of holes are formed in the passivation layer, and a plurality of solder balls respectively accommodated in the plurality of holes. The semiconductor chip has a first plurality of pads, wherein a plurality of copper pillar micro-bumps respectively extend from the first plurality of pads, and the plurality of copper pillar micro-bumps are respectively connected to the plurality of solder balls.

The present disclosure provides a package device and a manufacturing method thereof. The package device includes an electronic device, a conductive pad having a first bottom surface, and a redistribution layer disposed between the conductive pad and the electronic device. The redistribution layer has a second bottom surface, and the conductive pad is electrically connected to the electronic device through the redistribution layer. The first bottom surface is closer to the electronic device than the second bottom in a normal direction of the electronic device.

A package structure includes at least one first redistribution layer, at least one second redistribution layer, a chip pad, a solder ball pad, a chip, a solder ball, and a molding compound. The first redistribution layer includes a first dielectric layer and a first redistribution circuit that fills a first opening and a second opening of the first dielectric layer. The first dielectric layer is aligned with the first redistribution circuit. The second redistribution layer includes a second and a third dielectric layers and a second redistribution circuit. The third dielectric layer is aligned with the second redistribution circuit. The chip pad and the solder ball pad are electrically connected to the first and the second redistribution circuits respectively. The chip and the solder ball are disposed on the chip pad and the solder ball pad respectively. The molding compound at least covers the chip and the chip pad.

A semiconductor structure includes a fan-out package, a packaging substrate, an solder material portions bonded to the fan-out package and the packaging substrate, an underfill material portion laterally surrounding the solder material portions, and at least one cushioning film located on the packaging substrate and contacting the underfill material portion and having a Young's modulus is lower than a Young's modulus of the underfill material portion.

A semiconductor package includes a die and a first lamination layer on the die with openings through the first lamination layer. A redistribution layer is on the first lamination layer and extends through the openings to the die. A plurality of conductive extensions are on the redistribution layer with each stud including a first surface on the redistribution layer, a second surface opposite to the first surface, and a sidewall between the first surface and the second surface. A second lamination layer is on the redistribution layer and the first lamination layer with the die encapsulated in molding compound. The second lamination layer is removed around the conductive extensions to expose the second surface and at least a portion of the sidewall of each stud to improve solder bond strength when mounting the package to a circuit board.

A wiring substrate has a first wiring substrate, plurality of second wiring substrates, and an adhesive layer. The plurality of second wiring substrates are arranged adjacent to each other on the first wiring substrate. The adhesive layer adheres the first wiring substrate and the plurality of second wiring substrates to each other. The adhesive layer has a filling portion that fills a groove portion formed by opposing of side surfaces of adjacent ones of the plurality of second wiring substrates.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

In one example, a semiconductor device comprises a first substrate comprising a first conductive structure, a first body over the first conductive structure and comprising an inner sidewall defining a cavity in the first body, a first interface dielectric over the first body, and a first internal interconnect in the first body and the first interface dielectric, and coupled with the first conductive structure. The semiconductor device further comprises a second substrate over the first substrate and comprising a second interface dielectric, a second body over the second interface dielectric, and a second conductive structure over the second body and comprising a second internal interconnect in the second body and the second interface dielectric. An electronic component is in the cavity, and the second internal interconnect is coupled with the first internal interconnect. Other examples and related methods are also disclosed herein.