In a described example, a method for making a packaged semiconductor device includes laser ablating a first groove with a first width and a first depth into a mounting surface of a substrate between landing pads. A first pillar bump on an active surface of a semiconductor device is bonded to a first landing pad; and a second pillar bump on the semiconductor device is bonded to a second landing pad. A channel forms with the active surface of the semiconductor device forming a first wall of the channel, the first pillar bump forms a second wall of the channel, the second pillar bump forming a third wall of the channel, and a surface of the first groove forms a fourth wall of the channel. The channel is filled with mold compound and at least a portion of the substrate and the semiconductor device are covered with mold compound.

A semiconductor device includes: a lead frame that is formed of metal; a wiring substrate that is opposed to the lead frame; an electronic component that is disposed between the lead frame and the wiring substrate; a connection member that connects lead frame and the wiring substrate; and encapsulating resin that is filled between the lead frame and the wiring substrate and covers the electronic component and the connection member. The lead frame includes: a first surface opposed to the wiring substrate and covered by the encapsulating resin; a second surface located on a back side of the first surface and exposed from the encapsulating resin; and a side surface neighboring first surface or the second surface, at least a portion of the side surface exposed from the encapsulating resin.

A substrate for semiconductor elements includes a terminal part including a first surface, a second surface opposite to the first surface, and side surfaces joining the first surface and the second surface, and a resin part covering the side surfaces and exposing the first surface of the terminal part. The resin part has a multi-layer structure including a first resin and a second resin, and the first resin is provided in contact with the side surfaces of the terminal part. The first resin and the second resin include a filler, and an amount of the filler included in the first resin is smaller than an amount of the filler included in the second resin.

A method and apparatus for conducting heat away from a semiconductor die are disclosed. A board assembly is disclosed that includes a first circuit board having an opening extending through the first circuit board. A Chemical Vapor Deposition Diamond (CVDD) window extends within the opening. A layer of thermally conductive paste extends over the CVDD window. A semiconductor die extends over the layer of thermally conductive paste such that a hot-spot on the semiconductor die overlies the CVDD window.

The invention relates to a vertical compound semiconductor structure having a substrate with a first main surface and an opposite second main surface, a vertical channel opening extending completely through the substrate between the first main surface and the second main surface and a layer stack arranged within the vertical channel opening. The layer stack includes an electrically conductive layer arranged within the vertical channel opening and a compound semiconductor layer arranged within the vertical channel opening. The compound semiconductor layer includes a compound semiconductor layer arranged on the electrically conductive layer and connected galvanically to the electrically conductive layer. Further, the invention relates to a method for producing such a vertical compound semiconductor structure.

Methods are provided for forming an IC power package including a power MOSFET device, a microprocessor/driver, and/or other discrete electronics. A lead frame may be etched to form a half-etch lead frame defining component attach structures at the top side of the lead frame. A power MOSFET may be mounted to a die attach pad defined in the half-etch lead frame, and the structure may be overmolded. The top of the overmolded structure may be grinded to reduce a thickness of the power MOSFET and expose a top surface of the MOSFET through the surrounding mold compound. A conductive contact may be formed on a top surface of the MOSFET. Selected portions of the half-etch lead frame may be etched from the bottom-up to separate the MOSFET from other package components, and to define a plurality of package posts for solder-mounting the package to a PCB.

In an embodiment, a device includes: a back-side redistribution structure including: a metallization pattern on a first dielectric layer; and a second dielectric layer on the metallization pattern; a through via extending through the first dielectric layer to contact the metallization pattern; an integrated circuit die adjacent the through via on the first dielectric layer; a molding compound on the first dielectric layer, the molding compound encapsulating the through via and the integrated circuit die; a conductive connector extending through the second dielectric layer to contact the metallization pattern, the conductive connector being electrically connected to the through via; and an intermetallic compound at the interface of the conductive connector and the metallization pattern, the intermetallic compound extending only partially into the metallization pattern.

A method of making a semiconductor package includes providing a base made from a conductive material. A surface of the base is covered with an outer layer of material different from the conductive material. Gaps are formed in the outer layer. The base is etched through the gaps to form projections on the base extending along a centerline to an end surface. Each projection has a first width at the end surface and a second width at the base less than the first width. The outer layer is removed. Leads and a die pad are formed from the base with the projections extending from the leads and the die pad. A die is attached to the projections. An insulating layer is provided over the leads, the die, and the die pad.

An electronic package is provided. An electronic component and a plurality of conductive pillars electrically connected with the electronic component are embedded in an encapsulating layer. Each of the conductive pillars has a circumferential surface and two end surfaces wider than the circumferential surface in width. The encapsulating layer encapsulates and protects the electronic component effectively, so as to improve the reliability of the electronic package. A method for fabricating the electronic package is also provided.

An electronic package is provided. An electronic component and a plurality of conductive pillars electrically connected with the electronic component are embedded in an encapsulating layer. Each of the conductive pillars has a circumferential surface and two end surfaces wider than the circumferential surface in width. The encapsulating layer encapsulates and protects the electronic component effectively, so as to improve the reliability of the electronic package. A method for fabricating the electronic package is also provided.