An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface. The first die is attached to the first surface of the substrate by first electrical connectors. The second die is attached to the first surface of the substrate by second electrical connectors. A size of one of the second electrical connectors is smaller than a size of one of the first electrical connectors.

In a described example, a method for making a packaged semiconductor device includes laser ablating a first groove with a first width and a first depth into a mounting surface of a substrate between landing pads. A first pillar bump on an active surface of a semiconductor device is bonded to a first landing pad; and a second pillar bump on the semiconductor device is bonded to a second landing pad. A channel forms with the active surface of the semiconductor device forming a first wall of the channel, the first pillar bump forms a second wall of the channel, the second pillar bump forming a third wall of the channel, and a surface of the first groove forms a fourth wall of the channel. The channel is filled with mold compound and at least a portion of the substrate and the semiconductor device are covered with mold compound.

A high voltage (HV) converter implemented on a printed circuit board (PCB) includes a double diffused metal oxide semiconductor (DMOS) package comprising a lead frame and a main DMOS chip. The lead frame includes a gate section electrically connected to a gate electrode of the main DMOS chip, a source section electrically connected to a source electrode of the main DMOS chip and a drain section electrically connected to a drain electrode of the main DMOS chip. The PCB layout includes a large area source copper pad attached to and overlapping the source section of the DMOS package to facilitate cooling and a small area drain copper pad attached to and overlapping the drain section of the DMOS package to reduce electromagnetic interference (EMI) noise.

A semiconductor device includes: a lead frame that is formed of metal; a wiring substrate that is opposed to the lead frame; an electronic component that is disposed between the lead frame and the wiring substrate; a connection member that connects lead frame and the wiring substrate; and encapsulating resin that is filled between the lead frame and the wiring substrate and covers the electronic component and the connection member. The lead frame includes: a first surface opposed to the wiring substrate and covered by the encapsulating resin; a second surface located on a back side of the first surface and exposed from the encapsulating resin; and a side surface neighboring first surface or the second surface, at least a portion of the side surface exposed from the encapsulating resin.

A method of packaging a semiconductor includes: positioning first and second semiconductor dies by one another on a carrier substrate, wherein first and second zones zone are defined with respect to the first die and third and fourth zones are defined with respect to the second die; forming first vias in the first zone, the first vias having a first size; forming second vias in the second zone, the second vias having a second size different from the first; forming third vias in the third zone, the third vias having a third size; forming fourth vias in the fourth zone, the fourth vias having a fourth size different from the third; and electrically connecting the first and second dies with an interconnection die such that electrical signals are exchangeable therebetween.

A first side of a tapeless leadframe package is etched to form a ring shaped protrusion and a lead protrusion extending from a base layer. An integrated circuit die is mounted to tapeless leadframe package in flip chip orientation with a front side facing the first side. An electrical and mechanical attachment is made between a bonding pad of the integrated circuit die and the lead protrusion. A mechanical attachment is made between the front side of the integrated circuit die and the ring shaped protrusion. The integrated circuit die and the protrusions from the tapeless leadframe package are encapsulated within an encapsulating block. The second side of the tapeless leadframe package is then etched to remove portions of the base layer and define a lead for a leadframe from the lead protrusion and further define a die support for the leadframe from the ring shaped protrusion.

A method of semiconductor device packaging to form a packaged semiconductor device includes providing (i) a vertical power semiconductor device die including a semiconductor substrate including a control node, a source or emitter on a top side or on a bottom side of the substrate, and a drain or a collector on another of the top side the bottom side, a backside metal (BSM) layer on the bottom side, and (ii) a leadframe. The leadframe includes a patterned die pad that includes a common continuous base portion and a two-dimensional array of spaced apart posts extending up from the base portion, with a separate solder cap on a top of the posts. The BSM layer is placed on the solder caps, and reflow processing bonds the BSM layer to the solder caps.

A semiconductor device includes: a substrate having an obverse and a reverse face; wirings on the obverse face such as a first and a second drive wiring; a semiconductor element connected to the first and second drive wirings; a first drive conductor on the same side as the semiconductor element with respect to the substrate outside of the semiconductor element as viewed in a thickness direction and connected to the first drive wiring; a second drive conductor on the same side as the semiconductor element with respect to the substrate outside of the semiconductor element as viewed in the thickness direction and connected to the second drive wiring; and a sealing resin covering the wirings and the semiconductor element, while also covering the first and second drive conductor such that their faces opposite to the substrate in the thickness direction are exposed. The first and the second drive conductor are separated in a direction parallel to the obverse face. The first drive conductor is smaller in volume than the second drive conductor.

A method of semiconductor device packaging to form a packaged semiconductor device includes providing (i) a vertical power semiconductor device die including a semiconductor substrate including a control node, a source or emitter on a top side or on a bottom side of the substrate, and a drain or a collector on another of the top side the bottom side, a backside metal (BSM) layer on the bottom side, and (ii) a leadframe. The leadframe includes a patterned die pad that includes a common continuous base portion and a two-dimensional array of spaced apart posts extending up from the base portion, with a separate solder cap on a top of the posts. The BSM layer is placed on the solder caps, and reflow processing bonds the BSM layer to the solder caps.

An embodiment is a structure comprising a substrate, a first die, and a second die. The substrate has a first surface. The first die is attached to the first surface of the substrate by first electrical connectors. The second die is attached to the first surface of the substrate by second electrical connectors. A size of one of the second electrical connectors is smaller than a size of one of the first electrical connectors.