Semiconductor devices including stacked semiconductor dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die coupled to a package substrate and a second semiconductor die stacked over the first semiconductor die and laterally offset from the first semiconductor die. The second semiconductor die can accordingly include an overhang portion that extends beyond a side of the first semiconductor die and faces the package substrate. In some embodiments, the second semiconductor die includes bond pads at the overhang portion that are electrically coupled to the package substrate via conductive features disposed therebetween. In certain embodiments, the first semiconductor die can include second bond pads electrically coupled to the package substrate via wire bonds.

In an embodiment, a device includes: an integrated circuit die having a first side and a second side opposite the first side; a die stack on the first side of the integrated circuit die; a dummy semiconductor feature on the first side of the integrated circuit die, the dummy semiconductor feature laterally surrounding the die stack, the dummy semiconductor feature electrically isolated from the die stack and the integrated circuit die; a first adhesive disposed between the die stack and the dummy semiconductor feature; and a plurality of conductive connectors on the second side of the integrated circuit die.

An integrated circuit device includes a first temperature sensor, a second temperature sensor, an A/D conversion circuit that performs A/D conversion on first and second temperature detection voltages from the first and second temperature sensors and outputs first and second temperature detection data, a digital signal processing circuit that generates frequency control data by performing a temperature compensation process by a neural network calculation process based on the first and second temperature detection data, and an oscillation signal generation circuit that generates an oscillation signal of a frequency set by the frequency control data using a resonator.

This disclosure generally relates to processor systems comprising printed circuit boards, I/O chips and processor chips with mated contacts. Contacts are formed on an upper surface of a printed circuit board having a through-hole and on a processor chip inside the through-hole. The processor chip may be a superconducting quantum processor chip comprising qubits, couplers, Digital to Analog converters, QFP shift registers and analog lines. Contacts are formed on an upper surface on an I/O chip and mated with the contacts on the printed circuit board and the processor chip. Contacts may be Indium bump bonds or superconducting solder bonds. The processor chip and the I/O chip may include a shield layer, a substrate layer and a thermally conductive layer.

Semiconductor devices including stacked semiconductor dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die coupled to a package substrate and a second semiconductor die stacked over the first semiconductor die and laterally offset from the first semiconductor die. The second semiconductor die can accordingly include an overhang portion that extends beyond a side of the first semiconductor die and faces the package substrate. In some embodiments, the second semiconductor die includes bond pads at the overhang portion that are electrically coupled to the package substrate via conductive features disposed therebetween. In certain embodiments, the first semiconductor die can include second bond pads electrically coupled to the package substrate via wire bonds.

In an embodiment, a device includes: an integrated circuit die having a first side and a second side opposite the first side; a die stack on the first side of the integrated circuit die; a dummy semiconductor feature on the first side of the integrated circuit die, the dummy semiconductor feature laterally surrounding the die stack, the dummy semiconductor feature electrically isolated from the die stack and the integrated circuit die; a first adhesive disposed between the die stack and the dummy semiconductor feature; and a plurality of conductive connectors on the second side of the integrated circuit die.

An optical module according to one embodiment includes: a package having a first surface and a second surface; a driver IC mounted on the first surface via a heat sink block; an optical circuit element mounted on the second surface via a temperature adjustment element; and a flexible substrate mounted on the driver IC and the optical circuit element, and electrically connected to the driver IC and the optical circuit element. The flexible substrate includes a main body extending in a first direction and a second direction intersecting the first direction, and a wiring formed on the main body. The main body includes a first end facing an optical circuit element. The wiring includes a first lead portion protruding from the first end to an outside of the main body along the first direction. The first lead portion is connected to the optical circuit element.

This disclosure generally relates to processor systems comprising printed circuit boards, I/O chips and processor chips with mated contacts. Contacts are formed on an upper surface of a printed circuit board having a through-hole and on a processor chip inside the through-hole. The processor chip may be a superconducting quantum processor chip comprising qubits, couplers, Digital to Analog converters, QFP shift registers and analog lines. Contacts are formed on an upper surface on an I/O chip and mated with the contacts on the printed circuit board and the processor chip. Contacts may be Indium bump bonds or superconducting solder bonds. The processor chip and the I/O chip may include a shield layer, a substrate layer and a thermally conductive layer.

A semiconductor device includes a first semiconductor die, a second semiconductor die and a plurality of supporting structures. The first semiconductor die includes a plurality of first bumps disposed adjacent to a first active surface thereof. The second semiconductor die includes a plurality of second bumps disposed adjacent to a second active surface thereof. The second bumps are bonded to the first bumps. The supporting structures are disposed between the first active surface of the first semiconductor die and the second active surface of the second semiconductor die. The supporting structures are electrically isolated and are disposed adjacent to a peripheral region of the second active surface of the second semiconductor die.

This disclosure generally relates to processor systems comprising printed circuit boards, I/O chips and processor chips with mated contacts. Contacts are formed on an upper surface of a printed circuit board having a through-hole and on a processor chip inside the through-hole. The processor chip may be a superconducting quantum processor chip comprising qubits, couplers, Digital to Analog converters, QFP shift registers and analog lines. Contacts are formed on an upper surface on an I/O chip and mated with the contacts on the printed circuit board and the processor chip. Contacts may be Indium bump bonds or superconducting solder bonds. The processor chip and the I/O chip may include a shield layer, a substrate layer and a thermally conductive layer.