A microelectronic package may include stacked microelectronic dice, wherein a first microelectronic die is attached to a microelectronic substrate, and a second microelectronic die is stacked over at least a portion of the first microelectronic die, wherein the microelectronic substrate includes a plurality of pillars extending therefrom, wherein the second microelectronic die includes a plurality of pillars extending therefrom in a mirror-image configuration to the plurality of microelectronic substrate pillars, and wherein the second microelectronic die pillars are attached to microelectronic substrate pillars with an attachment material.

A connection body which comprises a base structure at least predominantly made of a semiconductor oxide material or glass material, and an electrically conductive wiring structure on and/or in the base structure, wherein the electrically conductive wiring structure comprises at least one vertical wiring section with a first lateral dimension on and/or in the base structure and at least one lateral wiring section connected with the at least one vertical wiring section, wherein the at least one lateral wiring section has a second lateral dimension on and/or in the base structure, which is different to the first lateral dimension.

A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, a conductive structure and at least one via structure. The conductive structure is disposed on an upper surface of the semiconductor substrate. The at least one via structure is disposed in the semiconductor substrate. A portion of the at least one via structure extends beyond the conductive structure.

A fan-out semiconductor package includes: a core member having a first through-hole and including a dummy metal layer; a first semiconductor chip disposed in the first through-hole and having a first active surface having first connection pads disposed thereon and a first inactive surface opposing the first active surface; a first encapsulant covering at least portions of the core member and the first semiconductor chip and filling at least portions of the first through-hole; and a first connection member disposed on the core member and the first active surface of the first semiconductor chip and including a first redistribution layer electrically connected to the first connection pads, wherein the dummy metal layer is electrically insulated from signal patterns of the first redistribution layer.

A semiconductor package may include a substrate including a first coupling terminal and a second coupling terminal, a first chip disposed on the substrate, the first chip including a first pad and a second pad, and a connection structure connecting the first coupling terminal to the first pad. A portion of the connection structure may be in contact with a first side surface of the first chip. The connection structure may include a connection conductor electrically connecting the first pad to the first coupling terminal.

A package structure includes a semiconductor die, a first insulating encapsulant, a plurality of first conductive features, an interconnect structure and bump structures. The semiconductor die includes a plurality of conductive pillars made of a first material. The first insulating encapsulant is encapsulating the semiconductor die. The first conductive features are disposed on the semiconductor die and electrically connected to the conductive pillars. The first conductive features include at least a second material different from the first material. The interconnect structure is disposed on the first conductive features, wherein the interconnect structure includes a plurality of connection structures made of the second material. The bump structures are electrically connecting the first conductive features to the connection structures, wherein the bump structures include a third material different from the first material and the second material.

A micro-device structure includes a substrate having a substrate surface and a substrate contact disposed on or in the substrate surface, a cavity extending into the substrate from the substrate surface, a micro-device disposed in the cavity, the micro-device comprising a micro-device contact, a planarization layer disposed over at least a portion of the substrate, and an electrode disposed at least partially over or on the planarization layer and electrically connected to the micro-device contact.

A method includes forming a package, which includes forming a plurality of redistribution lines over a carrier, and forming a thermal dissipation block over the carrier. The plurality of redistribution lines and the thermal dissipation block are formed by common processes. The thermal dissipation block has a first metal density, and the plurality of redistribution lines have a second metal density smaller than the first metal density. The method further includes forming a metal post over the carrier, placing a device die directly over the thermal dissipation block, and encapsulating the device die and the metal post in an encapsulant. The package is then de-bonded from the carrier.

Package structure with folded die arrangements and methods of fabrication are described. In an embodiment, a package structure includes a first die and vertical interposer side-by-side. A second die is face down on an electrically connected with the vertical interposer, and a local interposer electrically connects the first die with the vertical interposer.

A semiconductor package structure includes a plurality of transducer devices, a cap structure, at least one redistribution layer (RDL) and a protection material. The transducer devices are disposed side by side. Each of the transducer devices has at least one transducing region, and includes a die body and at least one transducing element. The die body has a first surface and a second surface opposite to the first surface. The transducing region is disposed adjacent to the first surface of the die body. The transducing element is disposed adjacent to the first surface of the die body and within the transducing region. The cap structure covers the transducing region of the transducer device to form an enclosed space. The redistribution layer (RDL) electrically connects the transducer devices. The protection material covers the transducer devices.