A described example includes: a reconstituted semiconductor device flip chip mounted on a device side surface of a package substrate, the package substrate having terminals for connecting the package substrate to a circuit board, the reconstituted semiconductor device further including: a semiconductor die mounted in a dielectric layer and having bond pads spaced from one another by at least a first pitch distance that is less than 100 microns; a redistribution layer formed over the bond pads having conductors in passivation layers; solder bumps on the redistribution layer coupled to the bond pads of the semiconductor die, the solder bumps spaced from one another by at least a second pitch distance that is greater than the first pitch distance; and solder joints formed between the package substrate and the solder bumps, the solder joints coupling the package substrate to the semiconductor die in the reconstituted semiconductor device.

A method of manufacturing a high-frequency device includes mounting a first chip having a first pillar on an upper surface thereof on a metal base, forming an insulator layer covering the first chip on the metal base, exposing an upper surface of the first pillar from the insulator layer, and forming a first wiring connected to the first pillar on the insulator layer and transmitting a high-frequency signal.

A semiconductor die is attached on a die mounting surface of a substrate. An insulating encapsulation of laser direct structuring (LDS) material is molded onto the substrate and the semiconductor die. The insulating encapsulation of LDS material has a front surface including a first portion and a second portion separated by gaps therebetween. Laser direct structuring processing is applied to the first portion of the front surface to structure in the encapsulation of LDS material electrically conductive formations including electrically conductive lines over the front surface and to the second portion of the front surface of the encapsulation of LDS material to form thereon a reinforcing warp-countering structure. The separation gaps are left exempt from laser direct structuring processing and the reinforcing warp-countering structure is electrically insulated from the electrically conductive lines by LDS material left exempt from laser direct structuring processing at the separation gaps.

A semiconductor device includes a semiconductor chip, a heat sink, a resin package, heat transfer material and multiple spacers. The heat sink absorbs heat of the semiconductor chip. The resin package accommodates the semiconductor chip, and the resin package has a surface at which the heat sink is disposed. The heat transfer material has fluidity, and the heat transfer material is filled between the heat sink and the cooling plate. The spacers are dispersedly arranged in the heat transfer material, and the spacers are in contact with the heat sink and the cooling plate.

An electronic circuit device according to the present invention includes a plane-shaped shield member having conductivity, at least one electronic circuit element having a first surface opposed to a second surface on which a connecting part is formed, the first surface arranged on the plane-shaped shield member, a rewiring layer comprises an insulating photosensitive resin layer enclosing the electronic circuit element on the plane-shaped shield member, a plurality of wiring photo vias having a plurality of first conductors electrically connected to a connecting part of the electronic element, a wiring having a second conductor electrically connected to each of the plurality of wiring photo vias on the same surface parallel to the plane-shaped shield member, and a wall-shaped shield groove having a third conductor for a sealing arranged to surround a thickness direction of the electronic circuit element.

A method of forming a semiconductor device includes attaching a semiconductor die to a flag of a leadframe and forming a conductive connector over a portion of the semiconductor die and a portion of the flag. A conductive connection between a first bond pad of the semiconductor die and the flag is formed by way of the conductive connector. A second bond pad of the semiconductor die is connected to a conductive lead of the plurality by way of a bond wire.

Disclosed is a light-emitting array structure having a substrate, a plurality of light-emitting pixel units, a plurality of first and second signal wires, and an encapsulating layer. The light-emitting pixel units are arranged in array on the substrate. Each light-emitting pixel unit includes a driving chip, a first flat layer, a first redistribution layer, a second flat layer, a second redistribution layer, and a light-emitting diode. Each first signal wire is electrically connected to a corresponding one of the first redistribution layers and extends in a first direction. The second signal wires extend in a level different from the first signal wires. Each second signal wire is electrically connected to a corresponding one of the second redistribution layers and extends in a second direction different from the first direction. The encapsulating layer covers the light-emitting pixel units, the first and second signal wires, and the substrate.

A semiconductor chip or die is mounted at a position on a support substrate. A light-permeable laser direct structuring (LDS) material is then molded onto the semiconductor chip positioned on the support substrate. The semiconductor chip is visible through the LDS material. Laser beam energy is directed to selected spatial locations of the LDS material to structure in the LDS material a pat gstern of structured formations corresponding to the locations of conductive lines and vias for making electrical connection to the semiconductor chip. The spatial locations of the LDS material to which laser beam energy is directed are selected as a function of the position the semiconductor chip which is visible through the LDS material, thus countering undesired effects of positioning offset of the chip on the substrate.

A method of manufacturing semiconductor devices such as integrated circuits comprises: providing one or more semiconductor chips having first and second opposed surfaces, coupling the semiconductor chip or chips with a support substrate with the second surface towards the support substrate, embedding the semiconductor chip or chips coupled with the support substrate in electrically-insulating packaging material by providing in the packaging material electrically-conductive passageways. The electrically-conductive passageways comprise: electrically-conductive chip passageways towards the first surface of the at least one semiconductor chip, and/or electrically-conductive substrate passageways towards the support substrate.

Implementations of a semiconductor package may include two or more die, each of the two more die coupled to a metal layer at a drain of each of the two more die, the two or more die and each metal layer arranged in two parallel planes; a first interconnect layer coupled at a source of each of the two more die; a second interconnect layer coupled to a gate of each of the two or more die and to a gate package contact through one or more vias; and an encapsulant that encapsulates the two or more die and at least a portion of the first interconnect layer, each metal layer, and the second interconnect layer.