Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 m to 0.8 M.

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 m to 0.8 M.

A clip structure and a semiconductor package using the same include different metals in multiple layers so as to selectively, easily and exactly fix semiconductor chips, which consists of a lightweight material so as to lighten the weight of semiconductor packages and to help reduce manufacturing costs, and which in particular, maintains the width of a self-welding layer consisting of a clip structure so as to help improve the quality of adhesion. That is, according to a clip structure of the present invention, which electrically connects package elements in a semiconductor package, the clip structure includes a main metallic layer that is configured to maintain a shape, and a first functional layer that is piled on one surface of the main metallic layer and consists of a metal different from that of the main metal layer.

A clip structure and a semiconductor package using the same include different metals in multiple layers so as to selectively, easily and exactly fix semiconductor chips, which consists of a lightweight material so as to lighten the weight of semiconductor packages and to help reduce manufacturing costs, and which in particular, maintains the width of a self-welding layer consisting of a clip structure so as to help improve the quality of adhesion. That is, according to a clip structure of the present invention, which electrically connects package elements in a semiconductor package, the clip structure includes a main metallic layer that is configured to maintain a shape, and a first functional layer that is piled on one surface of the main metallic layer and consists of a metal different from that of the main metal layer.

A semiconductor device includes: a first chip to restrict current flow in a first direction through a current path; a second chip to restrict the current flow in a second direction opposite to the first direction, through the current path; a wiring having one end connected to the first chip and the other end connected to the second chip, and provided as a part of the current path by relaying the first chip and the second chip; a lead frame having a first lead arranged and fixed with the first chip and a second lead is arranged and fixed with the second chip; and molding resin sealing the first chip, the second chip, the wiring and the lead frame. The wiring is a shunt resistor having a resistive body. The lead frame further has a sense terminal to detect a voltage drop across the resistive body.

A semiconductor device includes: a first chip to restrict current flow in a first direction through a current path; a second chip to restrict the current flow in a second direction opposite to the first direction, through the current path; a wiring having one end connected to the first chip and the other end connected to the second chip, and provided as a part of the current path by relaying the first chip and the second chip; a lead frame having a first lead arranged and fixed with the first chip and a second lead is arranged and fixed with the second chip; and molding resin sealing the first chip, the second chip, the wiring and the lead frame. The wiring is a shunt resistor having a resistive body. The lead frame further has a sense terminal to detect a voltage drop across the resistive body.

A method of fabricating a semiconductor device is disclosed. In one aspect, the method includes placing a first semiconductor chip on a carrier with the first main surface of the first semiconductor chip facing the carrier. A first layer of soft solder material is provided between the first main surface and the carrier. Heat is applied during placing so that a temperature at the first layer of soft solder material is equal to or higher than a melting temperature of the first layer of soft solder material. A second layer of soft solder material is provided between the first contact area and the second main surface. Heat is applied during placing so that a temperature at the second layer of soft solder material is equal to or higher than a melting temperature of the second layer of soft solder material. The first and second layers of soft solder material are cooled to solidify the soft solder materials.

A method of fabricating a semiconductor device is disclosed. In one aspect, the method includes placing a first semiconductor chip on a carrier with the first main surface of the first semiconductor chip facing the carrier. A first layer of soft solder material is provided between the first main surface and the carrier. Heat is applied during placing so that a temperature at the first layer of soft solder material is equal to or higher than a melting temperature of the first layer of soft solder material. A second layer of soft solder material is provided between the first contact area and the second main surface. Heat is applied during placing so that a temperature at the second layer of soft solder material is equal to or higher than a melting temperature of the second layer of soft solder material. The first and second layers of soft solder material are cooled to solidify the soft solder materials.

A clip structure and a semiconductor package using the same include different metals in multiple layers so as to selectively, easily and exactly fix semiconductor chips, which consists of a lightweight material so as to lighten the weight of semiconductor packages and to help reduce manufacturing costs, and which in particular, maintains the width of a self-welding layer consisting of a clip structure so as to help improve the quality of adhesion. That is, according to a clip structure of the present invention, which electrically connects package elements in a semiconductor package, the clip structure includes a main metallic layer that is configured to maintain a shape, and a first functional layer that is piled on one surface of the main metallic layer and consists of a metal different from that of the main metal layer.

A clip structure and a semiconductor package using the same include different metals in multiple layers so as to selectively, easily and exactly fix semiconductor chips, which consists of a lightweight material so as to lighten the weight of semiconductor packages and to help reduce manufacturing costs, and which in particular, maintains the width of a self-welding layer consisting of a clip structure so as to help improve the quality of adhesion. That is, according to a clip structure of the present invention, which electrically connects package elements in a semiconductor package, the clip structure includes a main metallic layer that is configured to maintain a shape, and a first functional layer that is piled on one surface of the main metallic layer and consists of a metal different from that of the main metal layer.