Various embodiments may provide a semiconductor package. The semiconductor package may include a first electrical component, a second electrical component, a first heat sink, and a second heat sink bonded to a first package interconnection component and a second package interconnection component. The first package interconnection component and the second package interconnection component may provide lateral and vertical interconnections in the package.

Provided is a semiconductor module, including: a semiconductor chip including a semiconductor substrate and a metal electrode provided above the semiconductor substrate; a protective film provided above the metal electrode; a plated layer provided above the metal electrode, having at least a part being in a height identical to the protective film; a solder layer provided above the plated layer; and a lead frame provided above the solder layer, wherein the plated layer is provided in a range not in contact with the protective film.

Provided is a semiconductor module, including: a semiconductor chip including a semiconductor substrate and a metal electrode provided above the semiconductor substrate; a protective film provided above the metal electrode; a plated layer provided above the metal electrode, having at least a part being in a height identical to the protective film; a solder layer provided above the plated layer; and a lead frame provided above the solder layer, wherein the plated layer is provided in a range not in contact with the protective film.

A semiconductor package includes a first die pad, a first semiconductor die mounted on the first die pad, an encapsulant body of electrically insulating material that encapsulates first die pad and the first semiconductor die, a plurality of package leads that each protrude out of a first outer face of the encapsulant body, a connection lug that protrudes out of a second outer face of the encapsulant body, the second outer face being opposite from the first outer face. The first semiconductor die includes first and second voltage blocking terminals. The connection lug is electrically connected to one of the first and second voltage blocking terminals of the first semiconductor die. A first one of the package leads is electrically connected to an opposite one of the first and second voltage blocking terminals of the first semiconductor die that the first connection lug is electrically connected to.

A semiconductor package includes a first die pad, a first semiconductor die mounted on the first die pad, an encapsulant body of electrically insulating material that encapsulates first die pad and the first semiconductor die, a plurality of package leads that each protrude out of a first outer face of the encapsulant body, a connection lug that protrudes out of a second outer face of the encapsulant body, the second outer face being opposite from the first outer face. The first semiconductor die includes first and second voltage blocking terminals. The connection lug is electrically connected to one of the first and second voltage blocking terminals of the first semiconductor die. A first one of the package leads is electrically connected to an opposite one of the first and second voltage blocking terminals of the first semiconductor die that the first connection lug is electrically connected to.

A semiconductor device is extremely reliable because a sealant thereof is difficult to deteriorate even when a SiC semiconductor element is energized. The semiconductor device is produced by sealing a SiC semiconductor element 11 mounted on a multilayer substrate 12 and electrically conductive connection members 14 and 18 with a sealant 20 containing an ultraviolet light absorbent.

A semiconductor device is extremely reliable because a sealant thereof is difficult to deteriorate even when a SiC semiconductor element is energized. The semiconductor device is produced by sealing a SiC semiconductor element 11 mounted on a multilayer substrate 12 and electrically conductive connection members 14 and 18 with a sealant 20 containing an ultraviolet light absorbent.

The present disclosure includes: a base plate having a shape of a sheet; a relay plate having a shape of a sheet; a terminal member; and an electronic component joined to one surface of the base plate. The base plate, the relay plate, and the terminal member are electrically conductive members and arranged on a same plane with gaps between the electrically conductive members. The electronic component and one surface of the relay plate are connected to each other by a bonding wire. The one surface of the relay plate and one surface of the terminal member are connected to each other by a bonding wire.

A semiconductor device includes a semiconductor die attached to a substrate and a metal clip attached to a side of the semiconductor die facing away from the substrate by a soldered joint. The metal clip has a plurality of slots dimensioned so as to take up at least 10% of a solder paste that reflowed to form the soldered joint. Corresponding methods of production are also described.

A semiconductor device includes a semiconductor die attached to a substrate and a metal clip attached to a side of the semiconductor die facing away from the substrate by a soldered joint. The metal clip has a plurality of slots dimensioned so as to take up at least 10% of a solder paste that reflowed to form the soldered joint. Corresponding methods of production are also described.