A clip structure and a semiconductor package using the same include different metals in multiple layers so as to selectively, easily and exactly fix semiconductor chips, which consists of a lightweight material so as to lighten the weight of semiconductor packages and to help reduce manufacturing costs, and which in particular, maintains the width of a self-welding layer consisting of a clip structure so as to help improve the quality of adhesion. That is, according to a clip structure of the present invention, which electrically connects package elements in a semiconductor package, the clip structure includes a main metallic layer that is configured to maintain a shape, and a first functional layer that is piled on one surface of the main metallic layer and consists of a metal different from that of the main metal layer.

A clip structure and a semiconductor package using the same include different metals in multiple layers so as to selectively, easily and exactly fix semiconductor chips, which consists of a lightweight material so as to lighten the weight of semiconductor packages and to help reduce manufacturing costs, and which in particular, maintains the width of a self-welding layer consisting of a clip structure so as to help improve the quality of adhesion. That is, according to a clip structure of the present invention, which electrically connects package elements in a semiconductor package, the clip structure includes a main metallic layer that is configured to maintain a shape, and a first functional layer that is piled on one surface of the main metallic layer and consists of a metal different from that of the main metal layer.

A method includes providing a first and a second joining partner each having a first main surface, wherein at least a portion of the first main surfaces of the first and joining partners each comprise a metal layer. The method further includes applying a plurality of solder preforms to the metal layer of the first main surface of at least one of the first and second joining partners, positioning the first and second joining partners so that the solder preforms contact the metal layers of the first main surfaces of the first and second joining partners, and melting the plurality of solder preforms under pressure to form a single continuous thin layer area interconnect comprising a diffusion solder bond which bonds together the metal layers of the of the first main surfaces of the first and second joining partners.

A method includes providing a first and a second joining partner each having a first main surface, wherein at least a portion of the first main surfaces of the first and joining partners each comprise a metal layer. The method further includes applying a plurality of solder preforms to the metal layer of the first main surface of at least one of the first and second joining partners, positioning the first and second joining partners so that the solder preforms contact the metal layers of the first main surfaces of the first and second joining partners, and melting the plurality of solder preforms under pressure to form a single continuous thin layer area interconnect comprising a diffusion solder bond which bonds together the metal layers of the of the first main surfaces of the first and second joining partners.