An embodiment related to a stacked package is disclosed. The stacked package includes a conductive gang with gang legs electrically coupling a second component stacked over a first die to a package substrate. The first die is mounted over a die attach region of the package substrate and electrically coupled to the package substrate.

An embodiment related to a stacked package is disclosed. The stacked package includes a conductive gang with gang legs electrically coupling a second component stacked over a first die to a package substrate. The first die is mounted over a die attach region of the package substrate and electrically coupled to the package substrate.

Provided is a semiconductor package in which a bonding structure is formed using metal grains included in metal powder layers having a coefficient of thermal expansion (CTE) similar with those of a substrate and a conductor so as to minimize generation of cracks and to improve reliability of bonded parts.

Provided is a semiconductor package in which a bonding structure is formed using metal grains included in metal powder layers having a coefficient of thermal expansion (CTE) similar with those of a substrate and a conductor so as to minimize generation of cracks and to improve reliability of bonded parts.

A semiconductor device according to an embodiment includes a base frame, a semiconductor element provided on the base frame, a connector provided on the semiconductor element, the connector having an upper surface, a side surface, and a porous body having a plurality of pores provided on at least the side surface, and a molded resin provided in a periphery of the semiconductor element and at least the side surface of the connector. The upper surface of the connector is exposed.

A semiconductor device according to an embodiment includes a base frame, a semiconductor element provided on the base frame, a connector provided on the semiconductor element, the connector having an upper surface, a side surface, and a porous body having a plurality of pores provided on at least the side surface, and a molded resin provided in a periphery of the semiconductor element and at least the side surface of the connector. The upper surface of the connector is exposed.

A method of forming a semiconductor device includes providing a carrier comprising a die attach pad, providing a semiconductor die that includes a bond pad disposed on a main surface of the semiconductor die, and providing a metal interconnect element, arranging the semiconductor die on the die attach pad such that the bond pad faces away from the die attach pad, and welding the metal interconnect element to the bond pad, wherein the bond pad comprises first and second metal layers, wherein the second metal layer is disposed between the first metal layer and a semiconductor body of the semiconductor die, wherein a thickness of the first metal layer is greater than a thickness of the second metal layer, and wherein the first metal layer has a different metal composition as the second metal layer.

A method of forming a semiconductor device includes providing a carrier comprising a die attach pad, providing a semiconductor die that includes a bond pad disposed on a main surface of the semiconductor die, and providing a metal interconnect element, arranging the semiconductor die on the die attach pad such that the bond pad faces away from the die attach pad, and welding the metal interconnect element to the bond pad, wherein the bond pad comprises first and second metal layers, wherein the second metal layer is disposed between the first metal layer and a semiconductor body of the semiconductor die, wherein a thickness of the first metal layer is greater than a thickness of the second metal layer, and wherein the first metal layer has a different metal composition as the second metal layer.

Provided is a semiconductor package in which a bonding structure is formed using metal grains included in metal powder layers having a coefficient of thermal expansion (CTE) similar with those of a substrate and a conductor so as to minimize generation of cracks and to improve reliability of bonded parts.

Provided is a semiconductor package in which a bonding structure is formed using metal grains included in metal powder layers having a coefficient of thermal expansion (CTE) similar with those of a substrate and a conductor so as to minimize generation of cracks and to improve reliability of bonded parts.