The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

A electrical connection element includes a planar mating surface adapted for mating with a metal bonding surface, a rim that forms an enclosed shape around the planar mating surface, and a plurality of outgassing grooves formed in the planar mating surface, wherein each of the outgassing grooves comprises a proximal end that is spaced apart from the rim and a distal end that intersects the rim, and wherein a cross-sectional area of each of the outgassing grooves increases along a lengthwise direction going from the proximal end to the distal end.

The present invention relates to a metal clip structure and a semiconductor package including the same, and more particularly, to a metal clip structure and a semiconductor package including the same which may be light-weighted, increase bond strength of a conductive wire, and minimize contamination occurring due to a solder material used to bond a semiconductor chip to a metal pad.

A semiconductor device includes a semiconductor element having a lower surface bonded to an insulating substrate side, and a plate-shaped lead terminal bonded to an upper surface of the semiconductor element, and having a horizontally extending portion. The horizontally extending portion in the lead terminal is bonded to the semiconductor element and includes a linearly extending portion in a planar view. The semiconductor device further includes a sealing resin that seals the semiconductor element together with the linearly extending portion in the lead terminal. A linear expansion coefficient of the sealing resin shows a value intermediate between a linear expansion coefficient of the lead terminal and a linear expansion coefficient of the semiconductor element, and the lead terminal includes a recess or a projection to horizontally and partially separate the linearly extending portion into parts.

In a power semiconductor module, the 0.2% yield strength of solder under a lead terminal that bonds the lead terminal and a semiconductor element is set to be lower than the 0.2% yield strength of solder under the semiconductor element that bonds the semiconductor element and an insulating substrate. As a result, the lead terminal is expanded with self-heating by energization of the semiconductor element, and stress is applied to the semiconductor element via the solder under the lead terminal. However, the solder under the lead terminal with low 0.2% yield strength reduces the stress that is applied to the semiconductor element. Thus, the reliability of a surface electrode of the semiconductor element that is bonded to the solder under the lead terminal is improved.

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

A method includes providing a substrate having substrate terminals and providing a first component having a first terminal and a second terminal. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first terminal and a substrate terminal and coupling the second clip to another substrate terminal. The method includes encapsulating the structure and removing a portion of the clip connector. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant. Other examples and related structures are also disclosed herein.

A method includes providing a substrate having substrate terminals and providing a first component having a first terminal and a second terminal. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first terminal and a substrate terminal and coupling the second clip to another substrate terminal. The method includes encapsulating the structure and removing a portion of the clip connector. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant. Other examples and related structures are also disclosed herein.

The disclosed subject matter relates to liquid metal interconnects for power semiconductor modules. For example, disclosed herein are semiconductor package devices, comprising: a semiconductor device comprising an electrode and/or contact pad; a solid metal circuit element; and a liquid metal interface comprising a liquid metal material. The liquid metal interface can append at least a portion of the solid metal circuit element to at least a portion of the electrode and/or contact pad within a contact area. Adhesive forces, cohesive forces, surface tension forces, capillary forces, viscosity, and/or wetting characteristics enable containment of the liquid metal interface within the contact area. Also disclosed herein are methods of making and use of any of the devices disclosed herein.