A connection member for connecting an electronic chip, wherein the connection member comprises a bulk body, and a coating at least partially coating the bulk body and comprising a material having higher electric and higher thermal conductivity than the bulk body, wherein a ratio between a thickness of the coating and a thickness of the bulk body is at least 0.0016 at at least a part of the connection member.

A connection member for connecting an electronic chip, wherein the connection member comprises a bulk body, and a coating at least partially coating the bulk body and comprising a material having higher electric and higher thermal conductivity than the bulk body, wherein a ratio between a thickness of the coating and a thickness of the bulk body is at least 0.0016 at at least a part of the connection member.

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.

An electrical connection member (1, 301, 401, 501, 601) includes a clad material (10, 110, 610) including at least both a first Cu layer (12) made of a Cu material and a low thermal expansion layer (11) made of an Fe material or Ni material having an average thermal expansion coefficient from room temperature to 300 C. smaller than that of the first Cu layer, the first Cu layer and the low thermal expansion layer being bonded to each other.

A packaged device has a die of semiconductor material bonded to a support. An electromagnetic shielding structure surrounds the die and is formed by a grid structure of conductive material extending into the support and an electromagnetic shield, coupled together. A packaging mass embeds both the die and the electromagnetic shield. The electromagnetic shield is formed by a plurality of metal ribbon sections overlying the die and embedded in the packaging mass. Each metal ribbon section has a thickness-to-width ratio between approximately 1:2 and approximately 1:50.

A packaged device has a die of semiconductor material bonded to a support. An electromagnetic shielding structure surrounds the die and is formed by a grid structure of conductive material extending into the support and an electromagnetic shield, coupled together. A packaging mass embeds both the die and the electromagnetic shield. The electromagnetic shield is formed by a plurality of metal ribbon sections overlying the die and embedded in the packaging mass. Each metal ribbon section has a thickness-to-width ratio between approximately 1:2 and approximately 1:50.