Implementations of semiconductor packages may include one or more die coupled over a substrate, an electrically conductive spacer coupled over the substrate, and a clip coupled over and to the one or more die and the electrically conductive spacer. The clip may electrically couple the one or more die and the electrically conductive spacer.

Disclosed is technology in that a clip structure formed of an inexpensive and light metallic material to easily performing soldering on a corresponding metal and to reduce costs of a semiconductor package and to reduce the weight of the semiconductor package. The composite clip structure bent at a predetermined angle and being in charge of electrical connection between components in a semiconductor package includes a main metal layer formed of a conductive material with a predetermined thickness, and a lower functional layer formed below the main metal layer and formed of a different type of metal from a metallic component of the main metal layer, wherein the lower functional layer is attached to the main metal layer to be integrated thereinto, and wherein the main metal layer is formed of a single metal containing a largest amount of aluminum (Al) or a metal mixture containing a largest amount of Al.

Disclosed is technology in that a clip structure formed of an inexpensive and light metallic material to easily performing soldering on a corresponding metal and to reduce costs of a semiconductor package and to reduce the weight of the semiconductor package. The composite clip structure bent at a predetermined angle and being in charge of electrical connection between components in a semiconductor package includes a main metal layer formed of a conductive material with a predetermined thickness, and a lower functional layer formed below the main metal layer and formed of a different type of metal from a metallic component of the main metal layer, wherein the lower functional layer is attached to the main metal layer to be integrated thereinto, and wherein the main metal layer is formed of a single metal containing a largest amount of aluminum (Al) or a metal mixture containing a largest amount of Al.

A method includes providing a substrate having substrate terminals and providing a first component having a first terminal and a second terminal. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first terminal and a substrate terminal and coupling the second clip to another substrate terminal. The method includes encapsulating the structure and removing a portion of the clip connector. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant. Other examples and related structures are also disclosed herein.

A method includes providing a substrate having substrate terminals and providing a first component having a first terminal and a second terminal. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first terminal and a substrate terminal and coupling the second clip to another substrate terminal. The method includes encapsulating the structure and removing a portion of the clip connector. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant. Other examples and related structures are also disclosed herein.

A connection member for connecting an electronic chip, wherein the connection member comprises a bulk body, and a coating at least partially coating the bulk body and comprising a material having higher electric and higher thermal conductivity than the bulk body, wherein a ratio between a thickness of the coating and a thickness of the bulk body is at least 0.0016 at at least a part of the connection member.

A half bridge circuit includes an input connection configured to supply an electric input, an output connection configured to supply an electric output to a load to be connected to the output connection, a switch and a diode arranged between the input connection and the output connection and a voltage limiting inductance arranged in series between the switch and the diode. The voltage limiting inductance is configured to limit, upon switching the switch, a maximum voltage across the switch to below a breakdown voltage of the switch. A corresponding method of operating the half bridge circuit and package are also described.

A half bridge circuit includes an input connection configured to supply an electric input, an output connection configured to supply an electric output to a load to be connected to the output connection, a switch and a diode arranged between the input connection and the output connection and a voltage limiting inductance arranged in series between the switch and the diode. The voltage limiting inductance is configured to limit, upon switching the switch, a maximum voltage across the switch to below a breakdown voltage of the switch. A corresponding method of operating the half bridge circuit and package are also described.

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.