A semiconductor package includes a leadframe including a die pad and a plurality of lead terminals. A vertical semiconductor device is attached on a first side by a die attach material to the die pad. A first clip is on the first vertical device that is solder connected to a terminal of the first vertical device on a second side opposite to the first side providing a first solder bonded interface, wherein the first clip is connected to at least a first of the lead terminals. The first solder bonded interface includes a first protruding surface standoff therein that extends from a surface on the second side of the first vertical device to physically contact the first clip.

Performance of a semiconductor device is enhanced. A semiconductor device is a semiconductor device obtained by sealing in a sealing portion first, second, and third semiconductor chips each incorporating a power transistor for high-side switch, fourth, fifth, and sixth semiconductor chips each incorporating a power transistor for low-side switch, and a semiconductor chip incorporating a control circuit controlling these chips. The source pads of the fourth, fifth, and sixth semiconductor chips are electrically coupled to a plurality of leads LD9 and a plurality of leads LD10 via a metal plate. As viewed in a plane, the leads LD9 intersect with a side MRd4 of the sealing portion and the leads LD10 intersect with a side MRd2 of the sealing portion.

Performance of a semiconductor device is enhanced. A semiconductor device is a semiconductor device obtained by sealing in a sealing portion first, second, and third semiconductor chips each incorporating a power transistor for high-side switch, fourth, fifth, and sixth semiconductor chips each incorporating a power transistor for low-side switch, and a semiconductor chip incorporating a control circuit controlling these chips. The source pads of the fourth, fifth, and sixth semiconductor chips are electrically coupled to a plurality of leads LD9 and a plurality of leads LD10 via a metal plate. As viewed in a plane, the leads LD9 intersect with a side MRd4 of the sealing portion and the leads LD10 intersect with a side MRd2 of the sealing portion.

A semiconductor device includes an insulating substrate, a first and a second obverse-surface metal layers disposed on an obverse surface of the insulating substrate, a first and a second reverse-surface metal layers disposed on a reverse surface of the insulating substrate, a first conductive layer and a first semiconductor element disposed on the first obverse-surface metal layer, and a second conductive layer and a second semiconductor element disposed on the second obverse-surface metal layer. Each of the first conductive layer and the second conductive layer has an anisotropic coefficient of linear expansion and is arranged such that the direction in which the coefficient of linear expansion is relatively large is along a predetermined direction perpendicular to the thickness direction of the insulating substrate. The first and second reverse-surface metal layers are smaller than the first and second obverse-surface metal layers in dimension in the predetermined direction.

A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.

A semiconductor device includes a wiring board, a semiconductor element disposed on the wiring board, and a lead having a bonding surface that is bonded to a main electrode of the semiconductor element by a bonding material. The main electrode includes a first pad and a second pad separated by an insulating layer extending in a first direction. The lead has at the bonding surface a recess that faces the main electrode so as to overlap the insulating layer and extends in the first direction. The recess has two outer ends in the first direction, one of which overlaps one end of the lead in plan view. The recess has a bottom surface that faces the main electrode of the semiconductor element, is not in contact with the bonding material and is continuous from the one of the two outer ends thereof to another end thereof in the first direction.

A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.

An embodiment related to a package is disclosed. The package includes a component mounted to a die attach region on a package substrate. A passive component with first and second passive component terminals is vertically attached to the package substrate. An encapsulant is disposed over the package substrate to encapsulate the package. In one embodiment, an external component is stacked above the encapsulant and is electrically coupled to the encapsulated package.

An IC (integrated circuit) package include an interconnect having a die attach pad and lead. The IC package also includes a die with a first side mounted on the die attach pad and a second side opposing the first side. The second side having a planar region. The planar region having selective polyimide structures between contact points of a connection pad. The IC package also includes a clip coupled to the connection pad and to a lead of the leads.

According to one embodiment, a semiconductor device includes: a chip; a first electrode provided on the chip; a first connector provided above the first electrode, extending in a first direction, and provided with a joint portion to be joined to the first electrode, on an end portion in the first direction of the first connector; and a joint member for use in joint between the first electrode and the joint portion. The joint portion is provided with a notch portion on at least one end portion in the first direction of an upper surface of the joint portion. The joint member is in contact with the first electrode, a lower surface of the joint portion facing the first electrode, and at least part of the notch portion.