It is an object of the present invention to provide a semiconductor module in which a bonded portion has high reliability, and that has a small area. A semiconductor module includes a plurality of metal plates extending in a horizontal direction and stacked in a vertical direction, at least one switching element, and at least one circuit element. The at least one switching element is bonded between two of the plurality of metal plates, facing each other in a vertical direction. The at least one circuit element is bonded between two of the plurality of metal plates, facing each other in a vertical direction. Disposed between the plurality of metal plates is an insulating material. At least one of the plurality of metal plates is bonded to the at least one switching element and the at least one circuit element.

An object of the present invention is to provide a power module capable of realizing a superior heat radiation property while satisfying a high insulation property. A power module according to the present invention includes: a conductor plate to which a switching element is connected; a heat radiation plate which is disposed to face the conductor plate; an insulating member which is disposed between the conductor plate and the heat radiation plate; and a conductive intermediate conductor which is disposed in the insulating member in a state of being electrically insulated from the conductor plate and the heat radiation plate, wherein the intermediate conductor has a communication region which communicates between the insulating member disposed on the side of the conductor plate with respect to the intermediate conductor and the insulating member disposed on the side of the heat radiation plate with respect to the intermediate conductor.

An object of the present invention is to provide a power module capable of realizing a superior heat radiation property while satisfying a high insulation property. A power module according to the present invention includes: a conductor plate to which a switching element is connected; a heat radiation plate which is disposed to face the conductor plate; an insulating member which is disposed between the conductor plate and the heat radiation plate; and a conductive intermediate conductor which is disposed in the insulating member in a state of being electrically insulated from the conductor plate and the heat radiation plate, wherein the intermediate conductor has a communication region which communicates between the insulating member disposed on the side of the conductor plate with respect to the intermediate conductor and the insulating member disposed on the side of the heat radiation plate with respect to the intermediate conductor.

It is an object of the present invention to provide a semiconductor module in which a bonded portion has high reliability, and that has a small area. A semiconductor module includes a plurality of metal plates extending in a horizontal direction and stacked in a vertical direction, at least one switching element, and at least one circuit element. The at least one switching element is bonded between two of the plurality of metal plates, facing each other in a vertical direction. The at least one circuit element is bonded between two of the plurality of metal plates, facing each other in a vertical direction. Disposed between the plurality of metal plates is an insulating material. At least one of the plurality of metal plates is bonded to the at least one switching element and the at least one circuit element.

An electrical circuit device includes a circuit board including a cavity extending from a top surface of the circuit board to an embedded conductor, an integrated circuit chip in the cavity, an electrical connection between the integrated circuit chip and the embedded conductor, a thermal slug disposed over a top surface of the integrated circuit chip, and a heat sink mounted to an outer surface of the thermal slug for transferring a thermal energy away from the circuit board, the heat sink extending above a top surface of the circuit board.

A method of mounting an integrated circuit chip to a circuit board includes placing the integrated circuit chip into a cavity extending from a surface of the circuit board to an embedded conductor, and electrically connecting the integrated circuit chip to the embedded conductor.

An electrical circuit device that includes a circuit board with an integrated circuit chip in a cavity that extends from a surface of the circuit board to an embedded conductor, and an electrical connection between the integrated circuit chip and the embedded conductor.

In accordance with an embodiment, a semiconductor component includes a support having a side in which a device receiving structure and an interconnect structure are formed and a side from which a plurality of leads extends. A semiconductor device having a control terminal and first and second current carrying terminals and configured from a III-N semiconductor material is mounted to the device receiving structure. The control terminal of the first electrical interconnect is coupled to a first lead by a first electrical interconnect. A second electrical interconnect is coupled between the first current carrying terminal of the semiconductor device and a second lead. The second current carrying terminal of the first semiconductor device is coupled to the device receiving structure or to the interconnect structure.