A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.

A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

A power module is obtained in which the thermal resistance in the range from a semiconductor device to a base plate is reduced and the stress in the joining portion is relieved. The power module includes at least one semiconductor device, an insulating substrate having an insulating layer, a circuit layer provided on an upper surface of the insulating layer and a metal layer provided on a lower surface of the insulating layer, and a sintering joining member with an upper surface larger in outer circumference than a back surface of the at least one semiconductor device, to join together the back surface of the at least one semiconductor device and an upper surface of the circuit layer on an upper-surface side of the insulating layer.

A power module is obtained in which the thermal resistance in the range from a semiconductor device to a base plate is reduced and the stress in the joining portion is relieved. The power module includes at least one semiconductor device, an insulating substrate having an insulating layer, a circuit layer provided on an upper surface of the insulating layer and a metal layer provided on a lower surface of the insulating layer, and a sintering joining member with an upper surface larger in outer circumference than a back surface of the at least one semiconductor device, to join together the back surface of the at least one semiconductor device and an upper surface of the circuit layer on an upper-surface side of the insulating layer.

A power module includes an insulating substrate, a case member, a power semiconductor element, a base member, a sealing member, and an adhesive member. The insulating substrate has a first surface and a second surface opposite to the first surface. The case member surrounds the insulating substrate when viewed in a direction perpendicular to the first surface. The power semiconductor element faces the first surface. The base member faces the second surface. The sealing member seals the power semiconductor element and the insulating substrate and is in contact with the case member. The adhesive member fixes the base member and the case member, and surrounds the insulating substrate when viewed in the direction perpendicular to the first surface.

Implementations of semiconductor packages may include: a first substrate having two or more die coupled to a first side, a clip coupled to each of the two or more die on the first substrate and a second substrate having two or more die coupled to a first side of the second substrate. A clip may be coupled to each of the two or more die on the second substrate. The package may include two or more spacers coupled to the first side of the first substrate and a lead frame between the first substrate and the second substrate and a molding compound. A second side of each of the first substrate and the second substrate may be exposed through the molding compound. A perimeter of the first substrate and a perimeter of the second substrate may not fully overlap when coupled through the two or more spacers.

Implementations of semiconductor packages may include: a first substrate having two or more die coupled to a first side, a clip coupled to each of the two or more die on the first substrate and a second substrate having two or more die coupled to a first side of the second substrate. A clip may be coupled to each of the two or more die on the second substrate. The package may include two or more spacers coupled to the first side of the first substrate and a lead frame between the first substrate and the second substrate and a molding compound. A second side of each of the first substrate and the second substrate may be exposed through the molding compound. A perimeter of the first substrate and a perimeter of the second substrate may not fully overlap when coupled through the two or more spacers.