Isolators for signals and/or powers transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may have working voltages, for example, higher than 500 Vrms, higher than 1000 Vrms, or between 333 Vrms and 1800 Vrms. The isolators may have a fully symmetrical configuration. The isolators may include a primary winding coupled to a driver and a secondary winding coupled to a receiver. The primary and secondary windings may be laterally coupled to and galvanically isolated from each other. The primary and secondary windings may include concentric traces. The primary and secondary windings may be fabricated using a single metallization layer on a substrate.

Isolators for signals and/or powers transmitted between two circuits configured to operate at different voltage domains are provided. The isolators may have working voltages, for example, higher than 500 Vrms, higher than 1000 Vrms, or between 333 Vrms and 1800 Vrms. The isolators may have a fully symmetrical configuration. The isolators may include a primary winding coupled to a driver and a secondary winding coupled to a receiver. The primary and secondary windings may be laterally coupled to and galvanically isolated from each other. The primary and secondary windings may include concentric traces. The primary and secondary windings may be fabricated using a single metallization layer on a substrate.

A semiconductor manufacturing apparatus includes a thrust-up unit having a plurality of blocks in contact with a dicing tape, a head having a collet absorbing the die and capable of being moved up and down, and a control section controlling the operation of the thrust-up unit and the head. The thrust-up unit can operate each of the plurality of blocks independently. The control section configures the thrust-up sequences of the plurality of blocks in a plurality of steps, and controls the operation of the plurality of blocks on the basis of a time chart recipe capable of setting the height and the speed of the plurality of blocks for each block and in each step.

A semiconductor manufacturing apparatus includes a thrust-up unit having a plurality of blocks in contact with a dicing tape, a head having a collet absorbing the die and capable of being moved up and down, and a control section controlling the operation of the thrust-up unit and the head. The thrust-up unit can operate each of the plurality of blocks independently. The control section configures the thrust-up sequences of the plurality of blocks in a plurality of steps, and controls the operation of the plurality of blocks on the basis of a time chart recipe capable of setting the height and the speed of the plurality of blocks for each block and in each step.

A thermosetting silicone resin composition contains the following components (A-1) to (D): (A-1) an alkenyl group-containing linear organopolysiloxane; (A-2) a branched organopolysiloxane shown by (R.sup.1.sub.3SiO.sub.1/2).sub.a(R.sup.2.sub.3SiO.sub.1/2).sub.b(SiO.sub.4/2).sub.c (1); (B-1) a branched organohydrogenpolysiloxane shown by (HR.sup.2.sub.2SiO.sub.1/2).sub.d(R.sup.2.sub.3SiO.sub.1/2).sub.e(SiO.sub.4/2).sub.f (2); (B-2) a linear organohydrogenpolysiloxane shown by (R.sup.2.sub.3SiO.sub.1/2).sub.2(HR.sup.2SiO.sub.2/2).sub.x(R.sup.2.sub.2SiO.sub.2/2).sub.y (3); (C) an adhesion aid which is an epoxy group-containing branched organopolysiloxane; and (D) a catalyst containing a combination of a zero-valent platinum complex with a divalent platinum complex and/or a tetravalent platinum complex. This provides a thermosetting silicone resin composition which causes little contamination at a gold pad portion and has excellent adhesiveness to a silver lead frame.

A thermosetting silicone resin composition contains the following components (A-1) to (D): (A-1) an alkenyl group-containing linear organopolysiloxane; (A-2) a branched organopolysiloxane shown by (R.sup.1.sub.3SiO.sub.1/2).sub.a(R.sup.2.sub.3SiO.sub.1/2).sub.b(SiO.sub.4/2).sub.c (1); (B-1) a branched organohydrogenpolysiloxane shown by (HR.sup.2.sub.2SiO.sub.1/2).sub.d(R.sup.2.sub.3SiO.sub.1/2).sub.e(SiO.sub.4/2).sub.f (2); (B-2) a linear organohydrogenpolysiloxane shown by (R.sup.2.sub.3SiO.sub.1/2).sub.2(HR.sup.2SiO.sub.2/2).sub.x(R.sup.2.sub.2SiO.sub.2/2).sub.y (3); (C) an adhesion aid which is an epoxy group-containing branched organopolysiloxane; and (D) a catalyst containing a combination of a zero-valent platinum complex with a divalent platinum complex and/or a tetravalent platinum complex. This provides a thermosetting silicone resin composition which causes little contamination at a gold pad portion and has excellent adhesiveness to a silver lead frame.

A light emitting device includes: a base having a first stepped portion and a second stepped portion; a light emitting element; an electronic member configured to be irradiated by light emitted from the light emitting element; a first wiring region located on the first stepped portion; a second wiring region located on the second stepped portion; wires connected to the light emitting element and the electronic member. The wires includes a first and second wires. The first wire has a first end that is connected to the first wiring region, and a second end. The second wire has a first end that is connected to the second wiring region, and a second end. A position of the second end of the first wire relative to the bottom face is lower than a position of the second end of the second wire relative to the bottom face.

A light emitting device includes: a base having a first stepped portion and a second stepped portion; a light emitting element; an electronic member configured to be irradiated by light emitted from the light emitting element; a first wiring region located on the first stepped portion; a second wiring region located on the second stepped portion; wires connected to the light emitting element and the electronic member. The wires includes a first and second wires. The first wire has a first end that is connected to the first wiring region, and a second end. The second wire has a first end that is connected to the second wiring region, and a second end. A position of the second end of the first wire relative to the bottom face is lower than a position of the second end of the second wire relative to the bottom face.

A semiconductor device includes a substrate that includes an opening extending through a thickness of the substrate, a frame that includes an integrated circuit (IC) die pad in the opening and a plurality of arms extending outwardly from the IC die pad, an IC mounted on the IC die pad, a plurality of bonding elements electrically coupling the substrate with the IC without the frame being an intermediary coupling element, and an encapsulant surrounding the IC, the plurality of bonding elements, and the plurality of arms. The substrate has a first major surface and a second major surface. Each arm is devoid of a contact pad. Each arm has a distal end coupled to the first major surface of the substrate, and each arm has a proximal end disposed over the first major surface of the substrate.

A semiconductor device includes a substrate that includes an opening extending through a thickness of the substrate, a frame that includes an integrated circuit (IC) die pad in the opening and a plurality of arms extending outwardly from the IC die pad, an IC mounted on the IC die pad, a plurality of bonding elements electrically coupling the substrate with the IC without the frame being an intermediary coupling element, and an encapsulant surrounding the IC, the plurality of bonding elements, and the plurality of arms. The substrate has a first major surface and a second major surface. Each arm is devoid of a contact pad. Each arm has a distal end coupled to the first major surface of the substrate, and each arm has a proximal end disposed over the first major surface of the substrate.