To improve an integration degree of a semiconductor device. The semiconductor device includes a plurality of wiring layers formed on the semiconductor substrate, a pad electrode formed on an uppermost wiring layer among the plurality of wiring layers, a base insulating film having a pad opening above the pad electrode, and a rewiring electrically connected to the pad electrode and extending over the base insulating film. Further, the semiconductor device includes a protective film covering an upper surface of the rewiring and having an external pad opening exposing part of the upper surface of the rewiring, an external pad electrode electrically connected to the rewiring through the external pad opening and extending over the protective film, and a wire connected to the external pad electrode. Part of the external pad electrode is located in a region outside the rewiring.

To improve an integration degree of a semiconductor device. The semiconductor device includes a plurality of wiring layers formed on the semiconductor substrate, a pad electrode formed on an uppermost wiring layer among the plurality of wiring layers, a base insulating film having a pad opening above the pad electrode, and a rewiring electrically connected to the pad electrode and extending over the base insulating film. Further, the semiconductor device includes a protective film covering an upper surface of the rewiring and having an external pad opening exposing part of the upper surface of the rewiring, an external pad electrode electrically connected to the rewiring through the external pad opening and extending over the protective film, and a wire connected to the external pad electrode. Part of the external pad electrode is located in a region outside the rewiring.

According to various embodiments, a semiconductor device may include: at least one first contact pad on a front side of the semiconductor device; at least one second contact pad on the front side of the semiconductor device; a layer stack disposed at least partially over the at least one first contact pad, wherein the at least one second contact pad is at least partially free of the layer stack; wherein the layer stack includes at least an adhesion layer and a metallization layer; and wherein the metallization layer includes a metal alloy and wherein the adhesion layer is disposed between the metallization layer and the at least one first contact pad for adhering the metal alloy of the metallization layer to the at least one first contact pad.

According to various embodiments, a semiconductor device may include: at least one first contact pad on a front side of the semiconductor device; at least one second contact pad on the front side of the semiconductor device; a layer stack disposed at least partially over the at least one first contact pad, wherein the at least one second contact pad is at least partially free of the layer stack; wherein the layer stack includes at least an adhesion layer and a metallization layer; and wherein the metallization layer includes a metal alloy and wherein the adhesion layer is disposed between the metallization layer and the at least one first contact pad for adhering the metal alloy of the metallization layer to the at least one first contact pad.

In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first bond pad includes a first plurality of pad segments. At least one pad segment of the first plurality of pad segments is electrically isolated from the remaining pad segments of the first plurality of pad segments.

In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first bond pad includes a first plurality of pad segments. At least one pad segment of the first plurality of pad segments is electrically isolated from the remaining pad segments of the first plurality of pad segments.