Semiconductor packages and modules are provided. The semiconductor package includes a package substrate; a semiconductor chip disposed on the package substrate; a molding layer covering the semiconductor chip and a first region of the package substrate; and a functional layer covering the molding layer and extending onto a second region of the package substrate that surrounds the first region.

Semiconductor packages and modules are provided. The semiconductor package includes a package substrate; a semiconductor chip disposed on the package substrate; a molding layer covering the semiconductor chip and a first region of the package substrate; and a functional layer covering the molding layer and extending onto a second region of the package substrate that surrounds the first region.

A semiconductor device 10 includes a pair of electrodes 16 and a conductive connection member 21 electrically bonded to the pair of electrodes 16. At least a portion of a perimeter of a bonding surface 24 of at least one of the pair of electrodes 16 and the conductive connection member 21 includes an electromigration reducing area 22.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

An integrated circuit package can contain a semiconductor die and provide electrical connections between the semiconductor die and additional electronic components. The integrated circuit package can reduce stress placed on the semiconductor die due to movement of the integrated circuit package due to, for example, temperature changes and/or moisture levels. The integrated circuit package can at least partially mechanically isolate the semiconductor die from the integrated circuit package.

A semiconductor package includes a package substrate including a power pad and a ground pad that are spaced apart from each other in a first horizontal direction, first and second semiconductor chips on the package substrate, the first and second semiconductor chips being stacked in a stepped shape that extends in a second horizontal direction perpendicular to the first horizontal direction, and a plurality of connection wires that electrically connect the package substrate to the first semiconductor chip and/or the second semiconductor chip. The first semiconductor chip includes a plurality of lower option pads. The second semiconductor chip includes a plurality of upper option pads. The plurality of connection wires include a conductive wire that electrically connects at least one of first and second upper chip pads of the second semiconductor chip to at least one of the lower option pads of the first semiconductor chip.

The present invention provides an image sensor module, including an integrated circuit substrate, an image sensing chip, a cover plate and an encapsulating material. The image sensing chip is disposed on the integrated circuit substrate. The image sensing chip includes an image sensing area and a non-image sensing area. A dam is disposed between the cover plate and the non-image sensing area of the image sensing chip. The cover plate includes a transparent material and a cushioning material. The encapsulating material covers the periphery of the image sensing chip, the periphery of the dam, part of the integrated circuit substrate and the periphery of the cover plate. The cushioning material is disposed between the transparent material and the dam and between the transparent material and the encapsulating material. The present invention reduces the possibility that the encapsulating material will peel off the cover plate.

A method for fabricating a semiconductor device includes forming a conductive liner over a first landing pad in a first region and over a second landing pad in a second region. The method further includes depositing a first conductive material within first openings within a resist layer formed over the conductive liner. The first conductive material overfills to form a first pad and a first layer of a second pad. The method further includes depositing a second resist layer over the first conductive material, and patterning the second resist layer to form second openings exposing the first layer of the second pad without exposing the first pad. A second conductive material is deposited over the second layer of the second pad.