A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first bond pad includes a first plurality of pad segments. At least one pad segment of the first plurality of pad segments is electrically isolated from the remaining pad segments of the first plurality of pad segments.

In accordance with an embodiment of the present invention, a semiconductor device includes a first bond pad disposed at a first side of a substrate. The first bond pad includes a first plurality of pad segments. At least one pad segment of the first plurality of pad segments is electrically isolated from the remaining pad segments of the first plurality of pad segments.

In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.

The present invention provides an image sensor module, including an integrated circuit substrate, an image sensing chip, a cover plate and an encapsulating material. The image sensing chip is disposed on the integrated circuit substrate. The image sensing chip includes an image sensing area and a non-image sensing area. A dam is disposed between the cover plate and the non-image sensing area of the image sensing chip. The cover plate includes a transparent material and a cushioning material. The encapsulating material covers the periphery of the image sensing chip, the periphery of the dam, part of the integrated circuit substrate and the periphery of the cover plate. The cushioning material is disposed between the transparent material and the dam and between the transparent material and the encapsulating material. The present invention reduces the possibility that the encapsulating material will peel off the cover plate.