The present invention provides a die bonding material containing the following component (A) and a solvent and having a refractive index (nD) at 25° C. of 1.41 to 1.43 and a thixotropic index of 2 or more, a light-emitting device including an adhesive member derived from the die bonding material, and a method for producing the light-emitting device. The die bonding material of the present invention is preferably used for fixing a light emitting element at a predetermined position. Component (A): a curable polysilsesquioxane compound having a repeating unit represented by the following formula (a-1) and satisfying predetermined requirements related to .sup.29Si-NMR and mass average molecular weight (Mw)
R.sup.1-D-SiO.sub.3/2  (a-1) [wherein R.sup.1 represents a fluoroalkyl group represented by a compositional formula: C.sub.mH.sub.(2m−n+1)F.sub.n; m represents an integer of 1 to 10, and n represents an integer of 2 to (2m+1); and D represents a linking group (excluding an alkylene group) for connecting R.sup.1 and Si, or a single bond].

Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. A PoP device includes a first packaged die and a second packaged die coupled to the first packaged die. Metal stud bumps are disposed between the first packaged die and the second packaged die. The metal stud bumps include a bump region and a tail region coupled to the bump region. The metal stud bumps are embedded in solder joints.

Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. A PoP device includes a first packaged die and a second packaged die coupled to the first packaged die. Metal stud bumps are disposed between the first packaged die and the second packaged die. The metal stud bumps include a bump region and a tail region coupled to the bump region. The metal stud bumps are embedded in solder joints.

A microelectronic device can include a polymer, a semiconductor, and a matching layer. The polymer can include a first coefficient of thermal expansion. The semiconductor can be coupled to the polymer layer. The matching layer can be adjacent the semiconductor, and the matching layer can include a second coefficient of thermal expansion that is about the same as the first coefficient of thermal expansion.

A microelectronic device can include a polymer, a semiconductor, and a matching layer. The polymer can include a first coefficient of thermal expansion. The semiconductor can be coupled to the polymer layer. The matching layer can be adjacent the semiconductor, and the matching layer can include a second coefficient of thermal expansion that is about the same as the first coefficient of thermal expansion.

A method of manufacturing a light emitting device includes: providing a substantially flat plate-shaped base member which in plan view includes at least one first portion having an upper surface, and a second portion surrounding the at least one first portion and having inner lateral surfaces; mounting at least one light emitting element on the at least one first portion; shifting a relative positional relationship between the at least one first portion and the second portion in an upper-lower direction to form at least one recess defined by an upper surface of the at least one first portion that serves as a bottom surface of the at least one recess and at least portions of the inner lateral surfaces of the second portion that serve as lateral surfaces of the at least one recess; and bonding the at least one first portion and the second portion with each other.

A method of manufacturing a light emitting device includes: providing a substantially flat plate-shaped base member which in plan view includes at least one first portion having an upper surface, and a second portion surrounding the at least one first portion and having inner lateral surfaces; mounting at least one light emitting element on the at least one first portion; shifting a relative positional relationship between the at least one first portion and the second portion in an upper-lower direction to form at least one recess defined by an upper surface of the at least one first portion that serves as a bottom surface of the at least one recess and at least portions of the inner lateral surfaces of the second portion that serve as lateral surfaces of the at least one recess; and bonding the at least one first portion and the second portion with each other.

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.

Provided is a method for bonding an insulated coating wire, which is capable of stably bonding a metal wire in an insulated coating wire and an electrode. One aspect of the present invention provides a method for bonding an insulated coating wire for electrically connecting a first electrode 12 and a second electrode to each other by an insulated coating wire 11 in which a metal wire is coated with an organic substance, the method including: a step (a) for placing the insulated coating wire 11 onto the first electrode 12; a step (b) for exposing a metal wire from the insulated coating wire; and a step (c) for forming a first bump over the exposed metal wire and the first electrode to electrically connect the metal wire to the first electrode.