A cryogenic electronic package includes a circuitized substrate, an interposer, a superconducting multichip module (SMCM) and at least one superconducting semiconductor structure. The at least one superconducting semiconductor structure is disposed over and coupled to the SMCM, and the interposer is disposed between the SMCM and the substrate. The SMCM and the at least one superconducting semiconductor structure are electrically coupled to the substrate through the interposer. A cryogenic electronic assembly including a plurality of cryogenic electronic packages is also provided.

A cryogenic electronic package includes a circuitized substrate, an interposer, a superconducting multichip module (SMCM) and at least one superconducting semiconductor structure. The at least one superconducting semiconductor structure is disposed over and coupled to the SMCM, and the interposer is disposed between the SMCM and the substrate. The SMCM and the at least one superconducting semiconductor structure are electrically coupled to the substrate through the interposer. A cryogenic electronic assembly including a plurality of cryogenic electronic packages is also provided.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.