Method for fabricating A packaging structure is provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure includes a passivation layer on the base substrate and exposing the solder pad body region and the trench region. The packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. The packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.

Method for fabricating A packaging structure is provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure includes a passivation layer on the base substrate and exposing the solder pad body region and the trench region. The packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. The packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.

The present invention discloses a high-reliability copper alloy bonding wire for electronic packaging and a preparation method therefor; the bonding wire comprises the following raw material components in percentage by weight: a copper content being 99.75%-99.96%, a tungsten content being 0.01-0.1%, a silver content being 0.01%-0.03%, a scandium content being 0.01%-0.02%, a titanium content being 0.001%-0.03%, a chromium content being 0.001%-0.03%, and an iron content being 0.001%-0.02%. The preparation method therefor comprises: extracting high-purity copper with a purity greater than 99.99%, preparing same as copper alloy ingots, and further preparing same as as-cast copper alloy crude bars, drawing the crude bars to form copper alloy wires, subjecting same to a heat treatment, and then precise drawing, a heat treatment, and cleaning to obtain copper alloy bonding wires of different specifications.

A nanostructure barrier for copper wire bonding includes metal grains and inter-grain metal between the metal grains. The nanostructure barrier includes a first metal selected from nickel or cobalt, and a second metal selected from tungsten or molybdenum. A concentration of the second metal is higher in the inter-grain metal than in the metal grains. The nanostructure barrier may be on a copper core wire to provide a coated bond wire. The nanostructure barrier may be on a bond pad to form a coated bond pad. A method of plating the nanostructure barrier using reverse pulse plating is disclosed. A wire bonding method using the coated bond wire is disclosed.

A semiconductor package includes a package substrate, a plurality of first semiconductor chips stacked on an upper surface of the package substrate in a stair-step configuration, the plurality of first semiconductor chips having an uppermost semiconductor chip at a first height from the upper surface of the package substrate, the uppermost semiconductor chip including a free end portion. Conductive wires respectively electrically connect chip pads of the first semiconductor chips to substrate pads of the package substrate. A plurality of first support structures each have a first end attached to the upper surface of the package substrate and an opposite second end attached to the free end portion of the uppermost semiconductor chip. The first support structures are inclined at an angle relative to the package substrate.

A nanostructure barrier for copper wire bonding includes metal grains and inter-grain metal between the metal grains. The nanostructure barrier includes a first metal selected from nickel or cobalt, and a second metal selected from tungsten or molybdenum. A concentration of the second metal is higher in the inter-grain metal than in the metal grains. The nanostructure barrier may be on a copper core wire to provide a coated bond wire. The nanostructure barrier may be on a bond pad to form a coated bond pad. A method of plating the nanostructure barrier using reverse pulse plating is disclosed. A wire bonding method using the coated bond wire is disclosed.

In some embodiments, the present application provides a memory device. The memory device includes a chip that includes a magnetic random access memory (MRAM) cell. A magnetic-field-shielding structure at least partially surrounding the chip including a multilayer stack. The multilayer stack includes a magnetic layer and a dielectric layer. A first magnetic region is located inside an inner surface of the magnetic field shielding structure and a second magnetic region is located immediately outside an outer surface of the magnetic field shielding structure. A magnetic field in the first magnetic region is less than a magnetic field in the second magnetic region

In some embodiments, the present application provides a memory device. The memory device includes a chip that includes a magnetic random access memory (MRAM) cell. A magnetic-field-shielding structure at least partially surrounding the chip including a multilayer stack. The multilayer stack includes a magnetic layer and a dielectric layer. A first magnetic region is located inside an inner surface of the magnetic field shielding structure and a second magnetic region is located immediately outside an outer surface of the magnetic field shielding structure. A magnetic field in the first magnetic region is less than a magnetic field in the second magnetic region

Method for fabricating A packaging structure is provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure includes a passivation layer on the base substrate and exposing the solder pad body region and the trench region. The packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. The packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.

Method for fabricating A packaging structure is provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure includes a passivation layer on the base substrate and exposing the solder pad body region and the trench region. The packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. The packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.