In various embodiments, a method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

In various embodiments, a method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

A method for manufacturing a bonding wire includes: putting a surface layer metal of a bonding wire in a crucible having a die cooler provided at the lower part thereof and melting the same; putting a main component metal core of the bonding wire in a core guide located at the upper part of the die cooler of the crucible and heating the core guide to the melting point or below of the metal core; transferring the metal core toward the die cooler so as to allow the molten surface layer metal to be injected to the surface of the metal core; and manufacturing a 50 m to 350 m bonding wire from the cast wire precursor by using a drawing die.

A method for manufacturing a bonding wire includes: putting a surface layer metal of a bonding wire in a crucible having a die cooler provided at the lower part thereof and melting the same; putting a main component metal core of the bonding wire in a core guide located at the upper part of the die cooler of the crucible and heating the core guide to the melting point or below of the metal core; transferring the metal core toward the die cooler so as to allow the molten surface layer metal to be injected to the surface of the metal core; and manufacturing a 50 m to 350 m bonding wire from the cast wire precursor by using a drawing die.

The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 m in thickness.

The present invention provides a die bonding material containing the following component (A) and a solvent and having a refractive index (nD) at 25 C. of 1.41 to 1.43 and a thixotropic index of 2 or more, a light-emitting device including an adhesive member derived from the die bonding material, and a method for producing the light-emitting device. The die bonding material of the present invention is preferably used for fixing a light emitting element at a predetermined position.

Component (A): a curable polysilsesquioxane compound having a repeating unit represented by the following formula (a-1) and satisfying predetermined requirements related to .sup.29Si-NMR and mass average molecular weight (Mw)

R.sup.1-D-SiO.sub.3/2 (a-1)

[wherein R.sup.1 represents a fluoroalkyl group represented by a compositional formula: C.sub.mH.sub.(2m-n+1)F.sub.n; m represents an integer of 1 to 10, and n represents an integer of 2 to (2m+1); and D represents a linking group (excluding an alkylene group) for connecting R.sup.1 and Si, or a single bond].

The present invention provides a die bonding material containing the following component (A) and a solvent and having a refractive index (nD) at 25 C. of 1.41 to 1.43 and a thixotropic index of 2 or more, a light-emitting device including an adhesive member derived from the die bonding material, and a method for producing the light-emitting device. The die bonding material of the present invention is preferably used for fixing a light emitting element at a predetermined position.

Component (A): a curable polysilsesquioxane compound having a repeating unit represented by the following formula (a-1) and satisfying predetermined requirements related to .sup.29Si-NMR and mass average molecular weight (Mw)

R.sup.1-D-SiO.sub.3/2 (a-1)

[wherein R.sup.1 represents a fluoroalkyl group represented by a compositional formula: C.sub.mH.sub.(2m-n+1)F.sub.n; m represents an integer of 1 to 10, and n represents an integer of 2 to (2m+1); and D represents a linking group (excluding an alkylene group) for connecting R.sup.1 and Si, or a single bond].

A light-emitting device includes a light emitting element having a pad electrode, and a metal member connected to the pad electrode via a wire. The wire has a layered structure including at least a core material containing copper as a main component, an intermediate layer containing palladium as a main component, and a surface layer containing silver as a main component. The intermediate layer is arranged between the core material and the surface layer.

A light-emitting device includes a light emitting element having a pad electrode, and a metal member connected to the pad electrode via a wire. The wire has a layered structure including at least a core material containing copper as a main component, an intermediate layer containing palladium as a main component, and a surface layer containing silver as a main component. The intermediate layer is arranged between the core material and the surface layer.

A wire bond system. Implementations may include: a bond wire including copper (Cu), a bond pad including aluminum (Al) and a sacrificial anode electrically coupled with the bond pad, where the sacrificial anode includes one or more elements having a standard electrode potential below a standard electrode potential of Al.