A light emitting apparatus includes a positive lead terminal and a negative lead terminal, each of which includes a first main surface, a second main surface, and an end surface including a first recessed surface area extending from a first point of the first main surface in cross section, and a second recessed surface area extending from a second point of the second main surface in cross section. A distance between a first part of the end surface of the positive lead terminal and a second part of the end surface of the negative lead terminal than a first distance between the first points of the positive lead terminal and the negative lead terminal and a second distance between the second points of the positive lead terminal and the negative lead terminal. The first part and the second part are separated from the first point and the second point.

A light emitting apparatus includes a positive lead terminal and a negative lead terminal, each of which includes a first main surface, a second main surface, and an end surface including a first recessed surface area extending from a first point of the first main surface in cross section, and a second recessed surface area extending from a second point of the second main surface in cross section. A distance between a first part of the end surface of the positive lead terminal and a second part of the end surface of the negative lead terminal than a first distance between the first points of the positive lead terminal and the negative lead terminal and a second distance between the second points of the positive lead terminal and the negative lead terminal. The first part and the second part are separated from the first point and the second point.

According to one embodiment, semiconductor device includes a semiconductor layer, an electrode provided on the semiconductor layer, and a bonding wire connected to the electrode, wherein the electrode comprises a first metal layer containing copper, a second metal layer containing aluminum, provided between the first metal layer and the semiconductor layer, and a third metal layer provided between the first metal layer and the second metal layer, the third metal layer comprising a material different from those of the first metal layer and the second metal layer, and the thickness of the first metal layer is larger than the thickness of the second metal layer and larger than the thickness of the third metal layer.

According to one embodiment, semiconductor device includes a semiconductor layer, an electrode provided on the semiconductor layer, and a bonding wire connected to the electrode, wherein the electrode comprises a first metal layer containing copper, a second metal layer containing aluminum, provided between the first metal layer and the semiconductor layer, and a third metal layer provided between the first metal layer and the second metal layer, the third metal layer comprising a material different from those of the first metal layer and the second metal layer, and the thickness of the first metal layer is larger than the thickness of the second metal layer and larger than the thickness of the third metal layer.

The present disclosure provides embodiments of package devices and methods for making package devices for a semiconductor die. One embodiment includes a die mounting structure having a finished bond pad that includes a copper bond pad and a cobalt-containing layer over a top surface of the copper bond pad, and a wire bond structure that is bonded to a top surface of the cobalt-containing layer of the finished bond pad, where cobalt-containing material of the cobalt-containing layer is located between a bottom surface of the wire bond structure and the top surface of the copper bond pad such that the cobalt-containing material is present under a center portion of the wire bond structure.

The present disclosure provides embodiments of package devices and methods for making package devices for a semiconductor die. One embodiment includes a die mounting structure having a finished bond pad that includes a copper bond pad and a cobalt-containing layer over a top surface of the copper bond pad, and a wire bond structure that is bonded to a top surface of the cobalt-containing layer of the finished bond pad, where cobalt-containing material of the cobalt-containing layer is located between a bottom surface of the wire bond structure and the top surface of the copper bond pad such that the cobalt-containing material is present under a center portion of the wire bond structure.

A light emitting device, includes: three light emitting elements with different emission colors; and a package including a plurality of lead frames to individually drive the three light emitting elements, and a resin molding formed integrally with the plurality of lead frames and including an opening in a surface of the resin molding to house the light emitting elements, a portion of each of the plurality of lead frames being exposed on a bottom surface of the opening, and another portion of each of the plurality of lead frames being exposed on an outer surface of the resin molding, the three light emitting elements being disposed on one of the lead frames exposed on the bottom surface of the opening and arranged so as to form an isosceles triangle with a bottom angle of 30 to 60 degrees, and a distance between two of the light emitting elements located on a base of the isosceles triangle is one to two times a length of a side of the light emitting element located at an apex of the isosceles triangle.

A light emitting device, includes: three light emitting elements with different emission colors; and a package including a plurality of lead frames to individually drive the three light emitting elements, and a resin molding formed integrally with the plurality of lead frames and including an opening in a surface of the resin molding to house the light emitting elements, a portion of each of the plurality of lead frames being exposed on a bottom surface of the opening, and another portion of each of the plurality of lead frames being exposed on an outer surface of the resin molding, the three light emitting elements being disposed on one of the lead frames exposed on the bottom surface of the opening and arranged so as to form an isosceles triangle with a bottom angle of 30 to 60 degrees, and a distance between two of the light emitting elements located on a base of the isosceles triangle is one to two times a length of a side of the light emitting element located at an apex of the isosceles triangle.

A light-emitting device includes a light emitting element having a pad electrode, and a metal member connected to the pad electrode via a wire. The wire has a layered structure including at least a core material containing copper as a main component, an intermediate layer containing palladium as a main component, and a surface layer containing silver as a main component. The intermediate layer is art raged between the core material and the surface layer.

A light-emitting device includes a light emitting element having a pad electrode, and a metal member connected to the pad electrode via a wire. The wire has a layered structure including at least a core material containing copper as a main component, an intermediate layer containing palladium as a main component, and a surface layer containing silver as a main component. The intermediate layer is art raged between the core material and the surface layer.