A microelectronic device, in a leaded/leadless chip scale package, has a die and intermediate pads located adjacent to the die. The intermediate pads are free of photolithographically-defined structures. Wire bonds connect the die to the intermediate pads. An encapsulation material at least partially surrounds the die and the wire bonds, and contacts the intermediate pads. Package leads, located outside of the encapsulation material, are attached to the intermediate pads. The microelectronic device is formed by mounting the die on a carrier, and forming the intermediate pads on the carrier without using a photolithographic process. Wire bonds are formed between the die and the intermediate pads. The die, the wire bonds, and the intermediate pads are covered with an encapsulation material, and the carrier is subsequently removed, exposing the intermediate pads. The package leads are attached to the intermediate pads.

A microelectronic device, in a fan-out fan-in chip scale package, has a die and an encapsulation material at least partially surrounding the die. Fan-out connections from the die extend through the encapsulation material and terminate adjacent to the die. The fan-out connections include wire bonds, and are free of photolithographically-defined structures. Fan-in/out traces connect the fan-out connections to bump bond pads. The die and at least a portion of the bump bond pads partially overlap each other. The microelectronic device is formed by mounting the die on a carrier, and forming the fan-out connections, including the wire bonds, without using a photolithographic process. The die and the fan-out connections are covered with an encapsulation material, and the carrier is subsequently removed, exposing the fan-out connections. The fan-in/out traces are formed so as to connect to the exposed portions of the fan-out connections, and extend to the bump bond pads.

A microelectronic device, in a fan-out fan-in chip scale package, has a die and an encapsulation material at least partially surrounding the die. Fan-out connections from the die extend through the encapsulation material and terminate adjacent to the die. The fan-out connections include wire bonds, and are free of photolithographically-defined structures. Fan-in/out traces connect the fan-out connections to bump bond pads. The die and at least a portion of the bump bond pads partially overlap each other. The microelectronic device is formed by mounting the die on a carrier, and forming the fan-out connections, including the wire bonds, without using a photolithographic process. The die and the fan-out connections are covered with an encapsulation material, and the carrier is subsequently removed, exposing the fan-out connections. The fan-in/out traces are formed so as to connect to the exposed portions of the fan-out connections, and extend to the bump bond pads.

A microelectronic device, in a fan-out chip scale package, has a die and an encapsulation material at least partially surrounding the die. The microelectronic device includes bump bond pads adjacent to the die that are exposed by the encapsulation material, the bump bond pads being free of photolithographically-defined structures. Wire bonds connect the die to the bump bond pads. The microelectronic device is formed by mounting the die on a carrier, and forming the bump bond pads adjacent to the die without using a photolithographic process. Wire bonds are formed between the die and the bump bond pads. The die, the wire bonds, and the bump bond pads are covered with an encapsulation material, and the carrier is subsequently removed, exposing the bump bond pads.

A microelectronic device, in a fan-out chip scale package, has a die and an encapsulation material at least partially surrounding the die. The microelectronic device includes bump bond pads adjacent to the die that are exposed by the encapsulation material, the bump bond pads being free of photolithographically-defined structures. Wire bonds connect the die to the bump bond pads. The microelectronic device is formed by mounting the die on a carrier, and forming the bump bond pads adjacent to the die without using a photolithographic process. Wire bonds are formed between the die and the bump bond pads. The die, the wire bonds, and the bump bond pads are covered with an encapsulation material, and the carrier is subsequently removed, exposing the bump bond pads.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A wire bond system. Implementations may include: a bond wire including copper (Cu), a bond pad including aluminum (Al) and a sacrificial anode electrically coupled with the bond pad, where the sacrificial anode includes one or more elements having a standard electrode potential below a standard electrode potential of Al.

A wire bond system. Implementations may include: a bond wire including copper (Cu), a bond pad including aluminum (Al) and a sacrificial anode electrically coupled with the bond pad, where the sacrificial anode includes one or more elements having a standard electrode potential below a standard electrode potential of Al.

In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.