There is provided a bonding wire for semiconductor devices that exhibits a favorable bondability even when being applied to wedge bonding at the room temperature, and also achieves an excellent bond reliability. The bonding wire includes a core material of Cu or Cu alloy (hereinafter referred to as a “Cu core material”), and a coating containing a noble metal formed on a surface of the Cu core material. A concentration of Cu at a surface of the wire is 30 to 80 at%.

A semiconductor package assembly and method of manufacturing is provided. The assembly includes a semiconductor package and a moulding resin case encapsulating the semiconductor package. The package includes a lead frame having a first frame side and a second frame side opposite to the first frame side; a silicon die structure having a first die side and a second die side opposite to the first side, the silicon die structure being mounted with its second die side on the first frame side of the lead frame; one or more bond wires electrically connecting the silicon die structure with the lead frame; as well as a coating layer covering the semiconductor package from the encapsulating moulding resin case, the coating layer being composed of two or more different amorphous layer coatings. The use of a coating layer covering the complete semiconductor package forming the encapsulating moulding resin case prevents any corrosion.

A semiconductor package assembly and method of manufacturing is provided. The assembly includes a semiconductor package and a moulding resin case encapsulating the semiconductor package. The package includes a lead frame having a first frame side and a second frame side opposite to the first frame side; a silicon die structure having a first die side and a second die side opposite to the first side, the silicon die structure being mounted with its second die side on the first frame side of the lead frame; one or more bond wires electrically connecting the silicon die structure with the lead frame; as well as a coating layer covering the semiconductor package from the encapsulating moulding resin case, the coating layer being composed of two or more different amorphous layer coatings. The use of a coating layer covering the complete semiconductor package forming the encapsulating moulding resin case prevents any corrosion.

The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 μm in thickness.

The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 μm in thickness.

A temporary protective film for semiconductor sealing molding includes a support film and an adhesive layer provided on one surface or both surfaces of the support film and containing a resin and a silane coupling agent. The content of the silane coupling agent in the temporary protective film may be more than 5% by mass and less than or equal to 35% by mass with respect to the total mass of the resin.

A temporary protective film for semiconductor sealing molding includes a support film and an adhesive layer provided on one surface or both surfaces of the support film and containing a resin and a silane coupling agent. The content of the silane coupling agent in the temporary protective film may be more than 5% by mass and less than or equal to 35% by mass with respect to the total mass of the resin.

In a described example, an apparatus includes: a first mold compound partially covering a thermal pad that extends through a pre-molded package substrate formed of a first mold compound, a portion of the thermal pad exposed on a die side surface of the pre-molded package substrate, the pre-molded package substrate having a recess on the die side surface, with an exposed portion of the thermal pad and a portion of the first mold compound in a die mounting area in the recess; a semiconductor die mounted to the thermal pad and another semiconductor die mounted to the mold compound in the die mounting area; wire bonds coupling bond pads on the semiconductor dies to traces on the pre-molded package substrate; and a second mold compound over the die side surface of the pre-molded package substrate and covering the wire bonds, the semiconductor dies, the recess, and a portion of the traces.

In a described example, an apparatus includes: a first mold compound partially covering a thermal pad that extends through a pre-molded package substrate formed of a first mold compound, a portion of the thermal pad exposed on a die side surface of the pre-molded package substrate, the pre-molded package substrate having a recess on the die side surface, with an exposed portion of the thermal pad and a portion of the first mold compound in a die mounting area in the recess; a semiconductor die mounted to the thermal pad and another semiconductor die mounted to the mold compound in the die mounting area; wire bonds coupling bond pads on the semiconductor dies to traces on the pre-molded package substrate; and a second mold compound over the die side surface of the pre-molded package substrate and covering the wire bonds, the semiconductor dies, the recess, and a portion of the traces.

A method for fabricating a semiconductor device includes the steps of first forming an aluminum (Al) pad on a substrate, forming a passivation layer on the substrate and an opening exposing the Al pad, forming a cobalt (Co) layer in the opening and on the Al pad, bonding a wire onto the Co layer, and then performing a thermal treatment process to form a Co—Pd alloy on the Al pad.