Patent classifications
H01L2224/45666
Chip package, method of forming a chip package and method of forming an electrical contact
A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.
Chip package, method of forming a chip package and method of forming an electrical contact
A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.
WIRING SYSTEM
A method for attaching a prefabricated miniature coaxial wire to a first electrical connection point, the prefabricated miniature coaxial wire having an electrically conductive core disposed within an electrical insulation layer disposed within an electrically conductive shield layer, includes attaching an exposed portion of the electrically conductive core at a distal end of the prefabricated miniature coaxial wire to the first electrical connection point, thereby establishing electrical conductivity between the electrically conductive core and the first electrical connection point, depositing a layer of electrically insulating material onto the exposed portion of the electrically conductive core such that the exposed portion of the electrically conductive core and the first electrical connection point is encased in the layer of electrically insulating material, and connecting the electrically conductive shield layer to a second electrical connection point using a connector formed from an electrically conductive material.
PROCESS FOR MANUFACTURING OF A THICK COPPER WIRE FOR BONDING APPLICATIONS
A process for manufacturing a bonding wire containing a core having a surface. The core contains 98.0% copper and has a cross sectional area of 75,00 to 600,000 m.sup.2 and an elastic limit RP0.2 (yield strength) of 40 to 95 N/mm.sup.2. The process involves (a) providing a copper core precursor; (b) drawing the precursor until a final diameter of the wire core is reached; and (c) annealing the drawn wire at a minimum annealing temperature of 650 to 1000 C. through its entire cross section for a minimum annealing time of 4 seconds to 2 hours.
PROCESS FOR MANUFACTURING OF A THICK COPPER WIRE FOR BONDING APPLICATIONS
A process for manufacturing a bonding wire containing a core having a surface. The core contains 98.0% copper and has a cross sectional area of 75,00 to 600,000 m.sup.2 and an elastic limit RP0.2 (yield strength) of 40 to 95 N/mm.sup.2. The process involves (a) providing a copper core precursor; (b) drawing the precursor until a final diameter of the wire core is reached; and (c) annealing the drawn wire at a minimum annealing temperature of 650 to 1000 C. through its entire cross section for a minimum annealing time of 4 seconds to 2 hours.