H01L2224/48157

ELECTRONIC PART AND SEMICONDUCTOR DEVICE
20220270988 · 2022-08-25 ·

Provided is an electronic part that includes a first substrate including a first base and a first coil, the first coil being electrically insulated from the first base, a second substrate including a second base and a second coil, the second coil being electrically insulated from the second base, and a support member that supports the first substrate and the second substrate. The first substrate is arranged between the second substrate and the support member in a thickness direction of the support member and overlaps the second substrate as viewed in the thickness direction, the first base is positioned between the first coil and the second coil in the thickness direction, and the first coil and the second coil are magnetically coupled.

Semiconductor device

A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

Semiconductor package including processor chip and memory chip
11309300 · 2022-04-19 · ·

A semiconductor package includes a package substrate, a processor chip mounted on a first region of the package substrate, a plurality of memory chips mounted on a second region of the package substrate being spaced apart from the first region of the package substrate, a signal transmission device mounted on a third region of the package substrate between the first and second regions of the package substrate, and a plurality of first bonding wires connecting the plurality of memory chips to the signal transmission device. The signal transmission device includes upper pads connected to the plurality of first bonding wires, penetrating electrodes arranged in a main body portion of the signal transmission device and connected to the upper pads, and lower pads in a lower surface portion of the signal transmission device and connected to the penetrating electrodes and connected to the package substrate via bonding balls.

SEMICONDUCTOR DEVICE
20220115351 · 2022-04-14 ·

There is provided a semiconductor device including: a semiconductor element; a support substrate configured to support the semiconductor element; an intermediate metal layer interposed between the semiconductor element and the support substrate in a thickness direction of the support substrate, wherein the semiconductor element and the intermediate metal layer are bonded by solid phase diffusion bonding; and a first positioning portion including a portion of the semiconductor element and a first portion of the intermediate metal layer and configured to suppress relative movement between the semiconductor element and the intermediate metal layer.

SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR DEVICE
20220084990 · 2022-03-17 · ·

Each of a plurality of semiconductor elements included in a semiconductor package includes a front-surface electrode being provided on a semiconductor substrate on a side opposite to a conductor substrate, a back-surface electrode being joined to the conductor substrate, a control pad configured to control current flowing between the front-surface electrode and the back-surface electrode, a frame being electrically connected to the front-surface electrode, a portion of the frame being exposed from a surface of a sealing material from which a lower surface of the conductor substrate is exposed, and a plurality of terminal blocks being electrically connected to a plurality of first pads, a portion of the plurality of terminal blocks being exposed from a surface of the sealing material, the surface being provided on a side opposite to the surface of the sealing material from which the lower surface of the conductor substrate is exposed.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
20220044977 · 2022-02-10 · ·

A semiconductor device includes a case enclosing a region where a semiconductor element as a component of an electric circuit exists. A resin part is fixed to an inside of the case in contact with the region. The resin part is provided with a conductive film, which is a part of the electric circuit. The conductive film is provided in the resin part so that the conductive film comes into contact with the region.

OPTICAL MODULE
20210336701 · 2021-10-28 ·

An optical module includes: a light source; an optical modulator capable of modulating light from the light source; a capacitor with an upper electrode and a lower electrode; and a resistor connected in series with and bonded face-to-face to the upper electrode of the capacitor. The resistor and the capacitor are connected in parallel with the optical modulator.

Package and semiconductor device
11158553 · 2021-10-26 · ·

A package includes a base substrate, a frame, and a lead frame. The base substrate is made of metal, and includes a mounting area on which a semiconductor element is to be mounted and a frame area surrounding the mounting area. The frame is provided on the frame area of the base substrate, and includes a first surface facing the frame area and a second surface opposite to the first surface. The lead frame is joined to the second surface of the frame. The frame includes a plurality of dielectric layers having a layered structure and an element connector to be electrically connected to the semiconductor element. The plurality of dielectric layers include a first dielectric layer having first permittivity and a second dielectric layer having second permittivity different from the first permittivity.

SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.

MULTI LEVEL RADIO FREQUENCY (RF) INTEGRATED CIRCUIT COMPONENTS INCLUDING PASSIVE DEVICES
20210313283 · 2021-10-07 ·

A multi-level radio frequency (RF) integrated circuit component includes an upper level including at least one inductor, and a lower level including at least one conductive element that provides electrical connection to the at least one inductor. The lower level separates the at least one inductor from a lower surface that is configured to be attached to a conductive pad. Related integrated circuit device packages are also discussed.