A semiconductor device includes a substrate including a main surface, a semiconductor element mounted on the main surface, a drive pad, and drive wires. The semiconductor element includes a front surface that faces in a same direction as the main surface and a drive electrode formed on the front surface and containing SiC. The drive wires are spaced apart from each other and connect the drive electrode to the drive pad. The drive wires include a first drive wire and a second drive wire configured to be a combination of furthermost ones of the drive wires. The first drive wire and the second drive wire are separated from each other by a greater distance at the drive pad than at the drive electrode as viewed in a first direction that is perpendicular to the main surface of the substrate.

Multi-die integrated circuit packages and methods of manufacturing the same are disclosed. An example integrated circuit package includes a first leadframe, a first die on a first side of the first leadframe, and a second die on a second side of the first leadframe opposite the first side. The example integrated circuit package further includes external second leadframe separate from the first leadframe.

A semiconductor device includes case resin having frame part defining space in which semiconductor chip is disposed and bottom part located under the frame portion; external connection terminal having external terminal partially embedded in the frame part, and internal terminal disposed on the bottom part to extend from the external terminal into the space; wire electrically connecting the semiconductor chip and the internal terminal; and sealing resin formed in the space to cover the semiconductor chip, the wire, and the internal terminal. The internal terminal has rectangular connecting portion, and step portions disposed at opposite ends of the connecting portion, respective portions of the upper surfaces of the step portions facing each other are covered with vibration controlling portions implemented by the case resin, and the sealing resin is filled in first grooves exposing other portions of the upper surfaces of the step portions.

A semiconductor module includes: an insulating heat dissipation sheet; a semiconductor device provided on the heat dissipation sheet; a lead frame including a lead terminal and a die pad which are formed integrally; a wire connecting the lead frame to the semiconductor device and constituting a main current path; and a mold resin scaling the heat dissipation sheet, the semiconductor device, the lead frame and the wire, wherein the lead terminal is led out from the mold resin, the heat dissipation sheet is in direct contact with an undersurface of the die pad, and the wire is bonded to the die pad directly above a contact part provided between the die pad and the heat dissipation sheet.

An electronic package is provided. The electronic package includes an electronic component and a leadframe. The electronic component has a passive surface. The leadframe includes a first patterned part under the electronic component and configured to provide a power to the electronic component by the passive surface.

An integrated circuit device includes a radio frequency transistor amplifier die having a first surface, a second surface, a semiconductor layer structure that is between the first and second surfaces and includes a plurality of transistor cells adjacent the first surface, and terminals coupled to the transistor cells. At least one passive electronic component is provided on the second surface of the die and is electrically connected to at least one of the terminals, for example, by at least one conductive via. One or more conductive pillar structures may protrude from the first surface of the die to provide electrical connections to one or more of the terminals.

A power module which inhibits disjoin between a sealing resin and an adhesive. The power module includes: an insulative substrate having a semiconductor element mounted on the top surface; a base plate joined to the rear surface of the insulative substrate; a case member with the base plate, that surrounds the insulative substrate, the case member having a bottom surface whose inner periphery portion side being in contact with a top surface of the base plate, the bottom surface being provided with an angled surface whose distance to the top surface of the base plate increases toward an outer periphery side of the base plate; an adhesive member filled between the base plate and the angled surface to adhere the base plate and the case member; and a filling member filled in a region bounded by the base plate and the case member.

An isolated power converter package includes a leadframe including a first and second die pad, first and second supports connected to first leads, second leads, at least one downset pad, and at least one downset feature between the supports and downset pad. A first semiconductor die is on the first die pad and a second semiconductor die is on the second die pad. The transformer stack includes a top and bottom side magnetic sheet on respective sides of a laminate substrate including an embedded coil that has coil contacts. Edges of the laminate substrate are on the supports. Bond wires are between the first die bond pads and the second leads, between the second die bond pads and the second leads, between the first die bond pads and coil contacts, and between the second die bond pads and the coil contacts. The downset pad is exposed from a mold compound.

A power module includes a lead frame, a substrate mounted on the lead frame, a first anchor pad, a second anchor pad, a plurality of die pads, and a plurality of transistor dies. The lead frame includes a first lead frame anchored bar attached to the first anchor pad, and a second lead frame anchored bar attached to the second anchor pad. The power module may include a single control IC or two or more control ICs. For the case including a single control IC, the singe control IC controls a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. For the case including two control ICs, a low voltage IC controls a first transistor, a second transistor, and a third transistor and the high voltage IC controls a fourth transistor, a fifth transistor, and a sixth transistor.

An isolated power converter package includes a leadframe including a first and second die pad, first and second supports connected to first leads, second leads, at least one downset pad, and at least one downset feature between the supports and downset pad. A first semiconductor die is on the first die pad and a second semiconductor die is on the second die pad. The transformer stack includes a top and bottom side magnetic sheet on respective sides of a laminate substrate including an embedded coil that has coil contacts. Edges of the laminate substrate are on the supports. Bond wires are between the first die bond pads and the second leads, between the second die bond pads and the second leads, between the first die bond pads and coil contacts, and between the second die bond pads and the coil contacts. The downset pad is exposed from a mold compound.