A package comprising at least one electronic chip, an encapsulant encapsulating at least part of the at least one electronic chip, a first electrically conductive contact structure extending partially within and partially outside of the encapsulant and being electrically coupled with at least one first terminal of at least one of the at least one electronic chip, and a second electrically conductive contact structure extending partially within and partially outside of the encapsulant and being electrically coupled with at least one second terminal of at least one of the at least one electronic chip, wherein at least a portion of the first electrically conductive contact structure and at least a portion of the second electrically conductive contact structure within the encapsulant are spaced in a direction between two opposing main surfaces of the package.

A method for manufacturing semiconductor devices is disclosed. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallisation layer is formed on the second surface of the semiconductor substrate. The metallisation layer has a thickness which is greater than the device thickness.

An interconnect (124) suitable for attachment of integrated circuit assemblies to each other comprises a polymer member (130) which is conductive and/or is coated with a conductive material (144). Such interconnects replace metal bond wires in some embodiments. Other features are also provided.

A semiconductor device has a semiconductor die having a plurality of die bump pad and substrate having a plurality of conductive trace with an interconnect site. A solder mask patch is formed interstitially between the die bump pads or interconnect sites. A conductive bump material is deposited on the interconnect sites or die bump pads. The semiconductor die is mounted to the substrate so that the conductive bump material is disposed between the die bump pads and interconnect sites. The conductive bump material is reflowed without a solder mask around the die bump pad or interconnect site to form an interconnect structure between the semiconductor die and substrate. The solder mask patch confines the conductive bump material within the die bump pad or interconnect site. The interconnect structure can include a fusible portion and non-fusible portion. An encapsulant is deposited between the semiconductor die and substrate.