In accordance with an embodiment, a semiconductor component includes a support having a side in which a device receiving structure and an interconnect structure are formed and a side from which a plurality of leads extends. A semiconductor device having a control terminal and first and second current carrying terminals and configured from a III-N semiconductor material is mounted to the device receiving structure. A first electrical interconnect is coupled between the first current carrying terminal of the semiconductor device and a first lead. A second electrical interconnect is coupled between the control terminal of the semiconductor device and a second lead.

In accordance with an embodiment, a semiconductor component includes a support having a side in which a device receiving structure and an interconnect structure are formed and a side from which a plurality of leads extends. A semiconductor device having a control terminal and first and second current carrying terminals and configured from a III-N semiconductor material is mounted to the device receiving structure. A first electrical interconnect is coupled between the first current carrying terminal of the semiconductor device and a first lead. A second electrical interconnect is coupled between the control terminal of the semiconductor device and a second lead.

A method of manufacturing a light emitting device includes: providing a substantially flat plate-shaped base member which in plan view includes at least one first portion having an upper surface, and a second portion surrounding the at least one first portion and having inner lateral surfaces; mounting at least one light emitting element on the at least one first portion; shifting a relative positional relationship between the at least one first portion and the second portion in an upper-lower direction to form at least one recess defined by an upper surface of the at least one first portion that serves as a bottom surface of the at least one recess and at least portions of the inner lateral surfaces of the second portion that serve as lateral surfaces of the at least one recess; and bonding the at least one first portion and the second portion with each other.

In accordance with an embodiment, a semiconductor component includes a support having a side in which a device receiving structure and an interconnect structure are formed and a side from which a plurality of leads extends. A semiconductor device having a control terminal and first and second current carrying terminals and configured from a III-N semiconductor material is mounted to the device receiving structure. The control terminal of the first electrical interconnect is coupled to a first lead by a first electrical interconnect. A second electrical interconnect is coupled between the first current carrying terminal of the semiconductor device and a second lead. The second current carrying terminal of the first semiconductor device is coupled to the device receiving structure or to the interconnect structure.

In accordance with an embodiment, a semiconductor component includes a support having a side in which a device receiving structure and an interconnect structure are formed and a side from which a plurality of leads extends. A semiconductor device having a control terminal and first and second current carrying terminals and configured from a III-N semiconductor material is mounted to the device receiving structure. The control terminal of the first electrical interconnect is coupled to a first lead by a first electrical interconnect. A second electrical interconnect is coupled between the first current carrying terminal of the semiconductor device and a second lead. The second current carrying terminal of the first semiconductor device is coupled to the device receiving structure or to the interconnect structure.

A substrate includes a first metal layer, a second metal layer, a third metal layer and an insulation layer surrounding the first metal layer, the second metal layer and the third metal layer. The first power component is electrically connected to the first metal layer. The second power component is electrically connected to the second metal layer. The shortest distance between the first metal layer exposed to a second surface of the insulation layer and the second metal layer exposed to the second surface is a first distance, the shortest distance between a first metal layer of the insulation layer exposed to the first surface and the second metal layer exposed to the first surface is a second distance, and a ratio value of the first distance to the second distance ranges between 1.25 and 1.4.

A method of manufacturing a package, the method comprising the steps of: preparing a resin compact having a recess, and including a pair of leads arranged at a bottom surface of the recess, a first resin body forming a lateral wall of the recess, and a second resin body arranged between the pair of leads; forming a reflective film entirely on at least the bottom surface of the recess and an inner surface of the lateral wall of the recess; and removing the reflective film formed on the pair of leads in the recess in the resin compact on which the reflective film has been formed.

A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.

A substrate includes: (1) a first patterned conductive layer, the first patterned conductive layer including a pair of first transmission lines adjacent to each other; and (2) a first reference layer above the pair of first transmission lines, the first reference layer defining an opening, wherein the pair of first transmission lines are exposed to the opening.

A light emitting element disclosed in an embodiment comprises: a support substrate having a plurality of pads and a black matrix layer outside the plurality of pads; a plurality of light emitting chips, at least one of which is disposed on at least one of the plurality of pads; and a light-transmitting resin layer which is disposed on the support substrate and covers the pads, the black matrix layer, and the light emitting chips.