A memory package structure includes a substrate, a memory chip and a plurality of resistors. The substrate has a plurality of pins. The pins include a plurality of data pins used to transfer data signal. The memory chip is located on the substrate. A plurality of bonding pads is located on the memory chip. The bonding pads include a plurality of data pads used to receive the data signal from data pins or transfer the data signal from the memory chip. The resistors is located on the substrate. Each data pad is connected to a corresponding one of the data pins through a corresponding one of the resistors.

A memory system includes dynamic random-access memory (DRAM) components that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. The memory components can be configured to route data around defective data connections to maintain full capacity and continue to support memory transactions.

Stacked semiconductor dies for semiconductor device assemblies and associated methods and systems are disclosed. In some embodiments, the semiconductor die assembly includes a substrate with a first opening in an inner portion and a second opening in an outer portion of the substrate. Further, the semiconductor die assembly can include a master die attached to a front side of the substrate, where the master die includes a first bond pad proximate to the first opening and a second bond pad proximate to the second opening. The first and second bond pads of the master die can be coupled with first and second substrate bond pads on a back side of the substrate, opposite to the front side, using first and second bonding wires extending through the first and second openings, respectively.

A cold plate includes a first side with a first surface, and a second side, opposite the first side. A coolant cavity is formed between the first side and the second side. A recessed base is machined into the first surface of the first side. The recessed base is bonded to a base copper plate and is a thinnest portion of the first surface.

A semiconductor package includes a first semiconductor die, a first substrate, a second semiconductor die, and a second substrate. The first substrate is disposed on the first semiconductor die and includes a plurality of first metal line layers vertically spaced apart from each other, and each of the first metal line layers is electrically connected to one of the followings: a ground source and a plurality of power sources of different types. The second semiconductor die is disposed on the first substrate. The second substrate is disposed on the second semiconductor die and includes a plurality of second metal line layers vertically spaced apart from each other, and each of the second metal line layers is electrically connected to one of the followings: the ground source and the power sources of different types.

A semiconductor package includes a first semiconductor die, a first substrate, a second semiconductor die, and a second substrate. The first substrate is disposed on the first semiconductor die and includes a plurality of first metal line layers vertically spaced apart from each other, and each of the first metal line layers is electrically connected to one of the followings: a ground source and a plurality of power sources of different types. The second semiconductor die is disposed on the first substrate. The second substrate is disposed on the second semiconductor die and includes a plurality of second metal line layers vertically spaced apart from each other, and each of the second metal line layers is electrically connected to one of the followings: the ground source and the power sources of different types.

A microelectronic package includes a substrate having a first surface. A microelectronic element overlies the first surface. Electrically conductive elements are exposed at the first surface of the substrate, at least some of which are electrically connected to the microelectronic element. The package includes wire bonds having bases bonded to respective ones of the conductive elements and ends remote from the substrate and remote from the bases. The ends of the wire bonds are defined on tips of the wire bonds, and the wire bonds define respective first diameters between the bases and the tips thereof. The tips have at least one dimension that is smaller than the respective first diameters of the wire bonds. A dielectric encapsulation layer covers portions of the wire bonds, and unencapsulated portions of the wire bonds are defined by portions of the wire bonds, including the ends, are uncovered by the encapsulation layer.

A microelectronic package includes a substrate having a first surface. A microelectronic element overlies the first surface. Electrically conductive elements are exposed at the first surface of the substrate, at least some of which are electrically connected to the microelectronic element. The package includes wire bonds having bases bonded to respective ones of the conductive elements and ends remote from the substrate and remote from the bases. The ends of the wire bonds are defined on tips of the wire bonds, and the wire bonds define respective first diameters between the bases and the tips thereof. The tips have at least one dimension that is smaller than the respective first diameters of the wire bonds. A dielectric encapsulation layer covers portions of the wire bonds, and unencapsulated portions of the wire bonds are defined by portions of the wire bonds, including the ends, are uncovered by the encapsulation layer.

A semiconductor apparatus comprises first and second semiconductor component having first and second metal pads, respectively. The first and second semiconductor components are stacked on each other to be bonded to each other at a bonding face. In a plane including the bonding face, first and second ranges each having a circular contour with a diameter of 10 μm or more are definable. None of bonded portions is provided inside of each of the first and second ranges. At least a part of the bonded portions is located between the first and second ranges. The bonded portions are disposed between the first and second ranges such that any straight line passing through the first and second ranges and parallel to a direction connecting centers of the first and second ranges intersects at least one bonded portion of the bonded portions.

A microelectronic package may be fabricated having at least one microelectronic die attached to a microelectronic substrate, wherein the microelectronic substrate includes at least one notch formed in at least one side thereof. The microelectronic dice may be attached to a first surface of the microelectronic substrate and in electronic communication with a bond pad on a second surface of the microelectronic substrate with a bond wire which extends through the notch in the microelectronic substrate.