A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.

A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.

A semiconductor device includes: a first transistor provided with an electron transit layer made of a nitride semiconductor, a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor that includes a second gate electrode, a second source electrode, and a second drain electrode. The first gate electrode and the second drain electrode are electrically connected to each other, while the first source electrode and the second source electrode are not electrically connected to each other.

In one example, a semiconductor structure or device comprises a substrate comprising a conductive structure having a top side and a first shielding terminal on the top side of the conductive structure, an electronic component on the top side of the conductive structure, a package body on the top side of the conductive structure and contacting a side of the electronic component, a shield on a top side of the package body and a lateral side of the package body, and a shield interconnect coupling the shield to the first shielding terminal of the conductive structure. Other examples and related methods are also disclosed herein.

In one example, a semiconductor structure or device comprises a substrate comprising a conductive structure having a top side and a first shielding terminal on the top side of the conductive structure, an electronic component on the top side of the conductive structure, a package body on the top side of the conductive structure and contacting a side of the electronic component, a shield on a top side of the package body and a lateral side of the package body, and a shield interconnect coupling the shield to the first shielding terminal of the conductive structure. Other examples and related methods are also disclosed herein.

A method for forming packaged electronic device structure includes providing a conductive leadframe. The leadframe can include a die pad with a first major surface and a second major surface opposite to the first major surface, and a plurality of conductive leads. The method can include coupling an electronic device to the plurality of conductive leads. The method can include providing an antenna structure, which can include a conductive pillar structure and an elongated conductive beam structure. The method can include providing a package body encapsulating the electronic device, at least portions of each conductive lead, and at least portions of the die pad. In an example, the conductive pillar structure can extend from the first package body surface to the second package body surface, the elongated conductive beam structure can be disposed adjoining the first package body surface and is electrically connected to the conductive pillar structure, and at least a portion of the elongated conductive beam structure is exposed outside of the package body.

A method for forming packaged electronic device structure includes providing a conductive leadframe. The leadframe can include a die pad with a first major surface and a second major surface opposite to the first major surface, and a plurality of conductive leads. The method can include coupling an electronic device to the plurality of conductive leads. The method can include providing an antenna structure, which can include a conductive pillar structure and an elongated conductive beam structure. The method can include providing a package body encapsulating the electronic device, at least portions of each conductive lead, and at least portions of the die pad. In an example, the conductive pillar structure can extend from the first package body surface to the second package body surface, the elongated conductive beam structure can be disposed adjoining the first package body surface and is electrically connected to the conductive pillar structure, and at least a portion of the elongated conductive beam structure is exposed outside of the package body.

A light-emitting device includes a package, a light-emitting element disposed on the package, and a light-transmissive member over the light-emitting element. An upper surface of the light-transmissive member and an upper surface of the package each have a plurality of projections. The light-transmissive member contains particles of light-transmissive first fillers having refractive indices smaller than the refractive index of a matrix of the light-transmissive member. Part of the particles of the first fillers is exposed to the air from the matrix of the light-transmissive member on the upper surface of the light-transmissive member.

A semiconductor device includes: a first semiconductor layer formed, on a substrate, of a nitride semiconductor; a second semiconductor layer formed, on the first semiconductor layer, of a nitride semiconductor; a source electrode formed on the second semiconductor layer; a drain electrode formed on the second semiconductor layer; a metal oxide film formed, between the source electrode and the drain electrode, on the second semiconductor layer; and a gate electrode formed on the metal oxide film. The metal oxide film includes AlO.sub.x and InO.sub.x. AlO.sub.x/InO.sub.x in the metal oxide film is greater than or equal to 3.

A method for manufacturing semiconductor devices is provided. The method includes bonding a semiconductor element to a first surface of a planar lead frame, clamping a partial area of the lead frame to hold the lead frame and the semiconductor element in molding dies, and covering at least a part of the lead frame and the semiconductor element with a resin member by resin molding which fills the molding dies with resin. A thin-walled portion having a relative small thickness is previously formed on a shortest virtual line connecting a clamp area of the lead frame to an area where the semiconductor element is bonded.